BLF888 UHF power LDMOS transistor

NXP Semiconductors
BLF888
UHF power LDMOS transistor
7.1.2 DVB-T
22
G p
(dB)
20
G p
001aak643
0
IMD shldr
(dBc)
−10
12
PAR
(dB)
10
η D
001aak644
70
η D
(%)
50
18
−20
8
30
PAR
16
IMD shldr
−30
6
10
14
−40
4
−10
12
−50
2
−30
10
−60
0 50 100 150 200 250 300 350
P L (W)
0
−50
0 50 100 150 200 250 300 350
P L (W)
V DS = 50 V; I Dq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
V DS = 50 V; I Dq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
7.2 Broadband RF figures
7.2.1 2-Tone
24
G p
(dB)
22
20
G p
001aak645
60
55
50
η D
(%)
24
G p
(dB)
22
20
G p
001aak646
−10
IMD3
(dBc)
−15
−20
18
η D
45
18
−25
16
40
16
−30
14
35
14
IMD3
−35
12
30
12
−40
10
25
10
−45
8
20
400 500 600 700 800 900
f (MHz)
8
−50
400 500 600 700 800 900
f (MHz)
P L(AV) = 250 W; V DS = 50 V; I Dq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
P L(AV) = 250 W; V DS = 50 V; I Dq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6.
2-Tone power gain and drain efficiency as
function of frequency; typical values
Fig 7.
2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
BLF888_2
© NXP B.V. 2009. All rights reserved.
Preliminary data sheet Rev. 02 — 22 October 2009 6 of 15