BLF245B VHF push-pull power MOS transistor - NXP Semiconductors
BLF245B VHF push-pull power MOS transistor - NXP Semiconductors
BLF245B VHF push-pull power MOS transistor - NXP Semiconductors
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Philips <strong>Semiconductors</strong><br />
Product specification<br />
<strong>VHF</strong> <strong>push</strong>-<strong>pull</strong> <strong>power</strong> <strong>MOS</strong> <strong>transistor</strong><br />
<strong>BLF245B</strong><br />
20<br />
handbook, halfpage<br />
MGP184<br />
C rs<br />
(pF)<br />
10<br />
0<br />
0 10 20 30 40<br />
V DS (V)<br />
V GS = 0; f = 1 MHz.<br />
Fig.8<br />
Feedback capacitance as a function of<br />
drain-source voltage; typical values per<br />
section.<br />
APPLICATION INFORMATION FOR CLASS-B OPERATION<br />
T h =25°C; R th mb-h = 0.3 K/W; unless otherwise specified.<br />
RF performance in a <strong>push</strong>-<strong>pull</strong>, common source, class-B test circuit.<br />
MODE OF OPERATION<br />
f<br />
(MHz)<br />
V DS<br />
(V)<br />
I DQ<br />
(mA)<br />
P L<br />
(W)<br />
G p<br />
(dB)<br />
CW, class-B 175 28 2 × 25 30 >14<br />
typ. 18<br />
η D<br />
(%)<br />
>55<br />
typ. 65<br />
Ruggedness in class-B operation<br />
The <strong>BLF245B</strong> is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases, under the<br />
following conditions:<br />
V DS = 28 V, f = 175 MHz at rated output <strong>power</strong>.<br />
2003 Aug 04 6
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