BLF245B VHF push-pull power MOS transistor - NXP Semiconductors
BLF245B VHF push-pull power MOS transistor - NXP Semiconductors BLF245B VHF push-pull power MOS transistor - NXP Semiconductors
Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B handbook, full pagewidth 200 mm rivet rivet copper strap copper strap copper strap copper strap rivet rivet copper strap copper strap 110 mm copper strap copper strap rivet rivet MBA377 +V G +V D andbook, full pagewidth L1 + L2 L10 C15 C14 C11 C12 C13 R7 L20 C1 C3 C4 C2 L4 L5 C5 C6 C7 C8 R1 L6 L7 C27 R2 C10 C9 L8 L9 L14 L16 L12 C21 C22 L13 L17 L15 C25 C23 L18 L19 C24 C26 L3 C16 C17 R8 C18 L11 C19 C20 +V G +V D L21 + L22 MBA378 The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a direct contact between the upper and lower sheets. Fig.12 Component layout for 175 MHz test circuit. 2003 Aug 04 10
Philips Semiconductors Product specification VHF push-pull power MOS transistor BLF245B 10 handbook, halfpage Z i (Ω) 5 MGP188 30 handbook, halfpage Z L (Ω) MGP189 r i 20 0 X L x i 10 −5 R L −10 0 100 200 300 400 f (MHz) 0 0 100 200 300 400 f (MHz) Class-B operation; V DS =28V;I DQ =2×25 mA; R GS =10Ω; P L = 30 W (total device). Fig.13 Input impedance as a function of frequency (series components); typical values per section. Class-B operation; V DS =28V;I DQ =2×25 mA; R GS =10Ω; P L = 30 W (total device). Fig.14 Load impedance as a function of frequency (series components); typical values per section. 25 handbook, halfpage G p (dB) 20 MGP190 15 handbook, halfpage 10 MBA379 5 Z i Z L Fig.16 Power gain as a function of frequency; 0 0 100 200 300 400 f (MHz) Class-B operation; V DS =28V;I DQ =2×25 mA; R GS =10Ω; P L = 30 W (total device). Fig.15 Definition of MOS impedance. typical values per section. 2003 Aug 04 11
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Philips <strong>Semiconductors</strong><br />
Product specification<br />
<strong>VHF</strong> <strong>push</strong>-<strong>pull</strong> <strong>power</strong> <strong>MOS</strong> <strong>transistor</strong><br />
<strong>BLF245B</strong><br />
handbook, full pagewidth<br />
200 mm<br />
rivet<br />
rivet<br />
copper<br />
strap<br />
copper<br />
strap<br />
copper<br />
strap<br />
copper<br />
strap<br />
rivet<br />
rivet<br />
copper<br />
strap<br />
copper<br />
strap<br />
110 mm<br />
copper<br />
strap<br />
copper<br />
strap<br />
rivet<br />
rivet<br />
MBA377<br />
+V G +V D<br />
andbook, full pagewidth<br />
L1 + L2<br />
L10<br />
C15 C14<br />
C11 C12<br />
C13<br />
R7<br />
L20<br />
C1<br />
C3<br />
C4<br />
C2<br />
L4<br />
L5<br />
C5<br />
C6<br />
C7<br />
C8<br />
R1<br />
L6<br />
L7 C27<br />
R2<br />
C10<br />
C9<br />
L8<br />
L9<br />
L14<br />
L16<br />
L12<br />
C21<br />
C22<br />
L13<br />
L17<br />
L15<br />
C25<br />
C23<br />
L18<br />
L19<br />
C24<br />
C26<br />
L3<br />
C16<br />
C17 R8<br />
C18<br />
L11<br />
C19 C20<br />
+V G +V D<br />
L21 + L22<br />
MBA378<br />
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully<br />
metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a<br />
direct contact between the upper and lower sheets.<br />
Fig.12 Component layout for 175 MHz test circuit.<br />
2003 Aug 04 10
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