OMMIC
OMMIC
OMMIC
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The last 40 years: III/V strengths and<br />
weaknesses<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
18/06/2010<br />
• Strengths :<br />
– Bandgap engineering<br />
(Binary, ternary , quaternary compounds)<br />
– High electron mobility and velocity ( high ft, fmax)<br />
– Wide and direct band gap ( high breakdown voltage)<br />
– fmax*Vb > 2 to 5 times that of Si<br />
– Low knee voltage<br />
– Semi –insulating and conducting substrates<br />
• Weaknesses<br />
– No natural oxide: no CMOS,<br />
– High surface state density<br />
– Deep traps in substrates<br />
– Difficult growth of large substrates<br />
– Reduced scalability<br />
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