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GaAs, InP, GaN Process Roadmap<br />
D05PH<br />
0,5µm<br />
35GHz<br />
D01PH<br />
135 nm<br />
100GHz<br />
D01MH<br />
130nm<br />
150GHZ<br />
GaN/Si 6inch MOVPE epitaxy<br />
D01GH<br />
( GaN/Si)<br />
100nm<br />
100 GHz<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
ED02AH<br />
180nm<br />
60GHz<br />
AFP<br />
AFP<br />
AFP<br />
DH15IB<br />
HBT InP<br />
180 GHz<br />
AFP<br />
D007IH<br />
70nm<br />
300GHz<br />
AFP<br />
AMI<br />
DH05IB<br />
HBT InP<br />
300 GHz<br />
AMI<br />
D005IH<br />
50 nm<br />
400 GHz<br />
AMI<br />
2009<br />
2010 2011<br />
2012<br />
AFP = approval for production AMI: approval for market introduction<br />
6 inch Line<br />
18/06/2010<br />
10 Confidential Information
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