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All rights reserved © 2008 <strong>OMMIC</strong><br />
III/V MMIC‘s : The natural<br />
complement to Silicon<br />
Gelijk hebben en gelijk krijgen<br />
MarcRocchi<br />
18/08/2009 Confidential Information<br />
An ISO9001:2000, ISO14001:2004 Registered Company
All rights reserved © 2008 <strong>OMMIC</strong><br />
The last 40 years and the scalability issue<br />
What you cannot do with Silicon<br />
Bandgap engineering<br />
A III/V roadmap<br />
The convergence: III/V and Silicon<br />
Conclusion<br />
18/06/2010<br />
2 Confidential Information
The last 40 years: the scalability issue<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
• The Si BJT pioneers ( Fairchild, Philips, TI ,etc.;) of<br />
the 60’s all failed<br />
• Exotic technologies like Josephson junctions were<br />
discontinued because the memory cell was not<br />
scalable ( IBM)<br />
• In the early 70’s start-ups like INTEL understood the<br />
unique scalability of Si-CMOS<br />
• In the 80’s, Silicon advances were dictating the<br />
system roadmaps<br />
• III/V technologies pioneered by IBM Zurich in the late<br />
60’s had no applications except for Space and<br />
Defense<br />
18/06/2010<br />
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The last 40 years: III/V strengths and<br />
weaknesses<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
18/06/2010<br />
• Strengths :<br />
– Bandgap engineering<br />
(Binary, ternary , quaternary compounds)<br />
– High electron mobility and velocity ( high ft, fmax)<br />
– Wide and direct band gap ( high breakdown voltage)<br />
– fmax*Vb > 2 to 5 times that of Si<br />
– Low knee voltage<br />
– Semi –insulating and conducting substrates<br />
• Weaknesses<br />
– No natural oxide: no CMOS,<br />
– High surface state density<br />
– Deep traps in substrates<br />
– Difficult growth of large substrates<br />
– Reduced scalability<br />
4 Confidential Information
What you cannot do with Silicon :<br />
Microwave applications are growing faster than Si<br />
Sat com,<br />
GPS<br />
High bit rate internet<br />
Défense<br />
Mobile handsets<br />
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Security<br />
Screening<br />
Identification<br />
Healthcare<br />
Radio<br />
Astronomy<br />
DBS<br />
WLAN, WiFi, WiMAX<br />
Point to point and<br />
point multi point<br />
communication<br />
Base stations<br />
Parking and<br />
Anti collision<br />
radars<br />
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5 Confidential Information
What you cannot do with Silicon<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
• In the early 90’s , for the first time , the Silicon motto<br />
« good is good enough » was no longer valid<br />
• The new system needs were ruthless and meant:<br />
– More linearity with ultimate low NF for cellular base stations<br />
– More linear power with high PAE for mobile handsets<br />
– Extreme multi-tone linear amplifiers for CATV<br />
– Low noise and high power up to 100GHz for telecom<br />
infrastructure<br />
– Low phase noise for 77GHz anti-collision radars<br />
– Highly linear and integrated corechips for electronically<br />
steerable antenna<br />
– Zero biased W band receivers for security portals<br />
– Shottky based components for low energy power electronics<br />
– Etc…<br />
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6 Confidential Information
18/06/2010<br />
Competition<br />
7 Confidential Information<br />
All rights reserved © 2008 <strong>OMMIC</strong>
Bandgap engineering: WB<br />
heterostructures: AlN/GaN/InN<br />
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18/06/2010<br />
8 Confidential Information
Bandgap engineering: Heterostructures:<br />
AlAs/GaAs/InAs, AlSb/GaSb/InSb<br />
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18/06/2010<br />
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GaAs, InP, GaN Process Roadmap<br />
D05PH<br />
0,5µm<br />
35GHz<br />
D01PH<br />
135 nm<br />
100GHz<br />
D01MH<br />
130nm<br />
150GHZ<br />
GaN/Si 6inch MOVPE epitaxy<br />
D01GH<br />
( GaN/Si)<br />
100nm<br />
100 GHz<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
ED02AH<br />
180nm<br />
60GHz<br />
AFP<br />
AFP<br />
AFP<br />
DH15IB<br />
HBT InP<br />
180 GHz<br />
AFP<br />
D007IH<br />
70nm<br />
300GHz<br />
AFP<br />
AMI<br />
DH05IB<br />
HBT InP<br />
300 GHz<br />
AMI<br />
D005IH<br />
50 nm<br />
400 GHz<br />
AMI<br />
2009<br />
2010 2011<br />
2012<br />
AFP = approval for production AMI: approval for market introduction<br />
6 inch Line<br />
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GaN/Si process<br />
GaN MMIC Technology in Development ( 125nm, 75GHz, 125GHz,<br />
1A/mm, 40V , 2,5W/mm @ 30GHz)<br />
0.700<br />
I ds (V ds ) pour V g s de 0 à -4 V par pas de 0,5V<br />
All rights reserved © 2008 <strong>OMMIC</strong><br />
0.600<br />
0.500<br />
0.400<br />
0.300<br />
0.200<br />
Vgs=0V<br />
Vgs=-<br />
0,5V<br />
Vgs=-1V<br />
Vgs=-<br />
1,5V<br />
Vgs=-2V<br />
Vgs=-<br />
2,5V<br />
Vgs=-3V<br />
Vgs=-<br />
3,5V<br />
Vgs=-4V<br />
0.100<br />
0.000<br />
0 2 4 6 8 10 12<br />
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11 Confidential Information
18/06/2010<br />
<strong>OMMIC</strong> Core chips<br />
12 Confidential Information<br />
All rights reserved © 2008 <strong>OMMIC</strong>
CGY2175 : 6 bit C-band Core Chip<br />
On Wafer Measurements : All attenuation and phase states<br />
(Un-corrected data)<br />
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18/06/2010<br />
13 Confidential Information
Millimeter wave imaging requirement<br />
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The chipset to be developed :<br />
Wide-band detector<br />
LNA amplifier<br />
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14 Confidential Information
Millimeter wave imaging chip set<br />
Wide band detector<br />
W band LNA<br />
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Integration can be key to system optimization if !!!!….<br />
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15 Confidential Information
Millimeter wave imaging chip<br />
RITD<br />
70 nm HEMT<br />
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HEMT active layers<br />
Substrate<br />
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The CONVERGENCE :<br />
take the best of all technologies<br />
45nm<br />
32 nm<br />
20 nm<br />
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256 nm<br />
700GHz<br />
50 nm<br />
400GHz<br />
30 nm<br />
600GHz<br />
32 nm<br />
2,7 THz<br />
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2008<br />
2010 2012 2014<br />
17 Confidential Information
Conclusion<br />
• III /V MMICs represent 1% of the Si IC market today<br />
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• We have entered an era of system push, making III/V<br />
solutions indispensable<br />
• European companies have neglected these<br />
technologies, by lack of vision and by not listening<br />
to the customers ( RFMD grew nearly 1B$ in 10 years)<br />
• The whole III/V industry inlcuding optoelectronics<br />
will be as large as Si in a few years time<br />
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18 Confidential Information
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