Laser diodes with phase conjugate feedback
Laser diodes with phase conjugate feedback Laser diodes with phase conjugate feedback
Risø National Laboratory Generation of carriers is governed by the rate Equation: dN I N 2 = − + D ∇ N − g ( N ) E 0 dt qV τ s (1) where N(x,y,z) is the excited carrier population, s is the carrier recombination time,I is the injected current D the ambipolar diffusivity, E 0 is the total optical field g(N)=a(N-N 0 ) is the gain. Assuming that: N = N +∆nexp( i∆ky) (2) We find that the third order susceptibility is given by: χ FWM ⎛ ⎞ ⎜ ⎟ χ FWM ,max 1 = ⎜ ⎟ 2 2 E ⎜ IkD 0 s τ ⎟ s 2 1+ 1+ 2 θ I ⎜ I s s E ⎟ ⎝ + 0 ⎠ 2 (3) Paul Michael Petersen, Laser Diodes with External Feedback (tutorial)
Risø National Laboratory The nonlinear susceptibility χ (3) χ (3) The third order nonlinear susceptibility versus the angle [in units of 1/( k(D a R )-½)] The nonlinear susceptibility is reduced to half the maximum at an angle corresponding to: 2 E0 1+ 1 Is θ½ = k Dτ Paul Michael Petersen, Laser Diodes with External Feedback (tutorial) s
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Risø National Laboratory<br />
The nonlinear susceptibility χ (3)<br />
χ (3)<br />
The third order nonlinear susceptibility versus the angle [in units of 1/( k(D<br />
a<br />
<br />
R<br />
)-½)]<br />
<br />
The nonlinear susceptibility is reduced to half the maximum at an angle<br />
corresponding to:<br />
2<br />
E0<br />
1+<br />
1 Is<br />
θ½<br />
=<br />
k Dτ<br />
Paul Michael Petersen, <strong>Laser</strong> Diodes <strong>with</strong> External Feedback (tutorial)<br />
s
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