Laser diodes with phase conjugate feedback
Laser diodes with phase conjugate feedback
Laser diodes with phase conjugate feedback
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Risø National Laboratory<br />
Generation of carriers is governed by the rate Equation:<br />
dN I N 2<br />
= − + D ∇ N − g ( N ) E<br />
0<br />
dt qV τ<br />
s<br />
(1)<br />
where N(x,y,z) is the excited carrier population,<br />
s<br />
is the carrier recombination time,I is the injected current<br />
D the ambipolar diffusivity, E 0 is the total optical field<br />
g(N)=a(N-N 0 ) is the gain.<br />
Assuming that:<br />
N = N +∆nexp( i∆ky)<br />
(2)<br />
We find that the third order susceptibility is given by:<br />
χ<br />
FWM<br />
⎛<br />
⎞<br />
⎜<br />
⎟<br />
χ<br />
FWM ,max<br />
1<br />
=<br />
⎜<br />
⎟<br />
2 2<br />
E ⎜ IkD<br />
0<br />
s<br />
τ ⎟<br />
s 2<br />
1+ 1+<br />
2 θ<br />
I ⎜ I<br />
s<br />
s<br />
E ⎟<br />
⎝ +<br />
0 ⎠<br />
2<br />
(3)<br />
Paul Michael Petersen, <strong>Laser</strong> Diodes <strong>with</strong> External Feedback (tutorial)
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