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252 Публикации сотрудников физического факультета за 2009 год ЛАБОРАТОРИЯ КРИОЭЛЕКТРОНИКИ Публикации в журналах 1. Снигирев О.В., Солдатов Е.С., Крупенин В.А., Губин С.П., Колесов В.В., Хомутов Г.Б., Шорохов В.В., Трифонов А.С., Преснов Д.Е., Баранов Д. Современные тенденции в развитии элементов вычислительных устройств post-CMOS эры. // Нанотехнологии: разработка, применение, 1(1), 43-55 (2009) 2. Volkov I., Snigirev O., Maresov A., Volkov A., Torii Y., Tanaka S. "SQUID-based relaxometric diagnostics of magnetic nanoparticles", Solid State Phenomena, vol. 152-53, pp. 217-220, 2009. 3. Крупенин В.А., Преснов Д.Е., Власенко В.С., Амитонов С.В. Полевой транзистор на основе кремниевого нанопровода. // Радиотехника, 3, 104- 107 (2009). 4. Kornev V. K., Soloviev I. I., Klenov N. V., Filippov T.V., Henrik Engseth, Mukhanov O. A. “Performance Advantages and Design Issues of SQIFs for Microwave Applications”, IEEE Transaction on Applied Superconductivity, vol. 19, No. 3, 2009, p. 916-919. 5. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “High Linearity SQIF-like Josephson-Junction Structures”, IEEE Transaction on Applied Superconductivity, vol. 19, No. 3, 2009, p. 741-744. 6. Корнев В.К., Соловьев И.И., Кленов Н.В., Шадрин А.В., Муханов О.А. “Выходной интерфейс для сверхпроводниковых цифровых устройств”, Радиотехника, в. 3, . 2009, с.131-141. 7. Сапков И.В., Колесов В.В., Солдатов Е.С. “Использование сфокусированного ионного пучка при создании молекулярного одноэлектронного транзистора”, ВМУ, серия 3 “Физика, астрономия”, № 4, с. 26-29, 2009. Тезисы докладов, публикации в трудах конференций и в электронных изданиях 1. Кленов Н. В., Корнев В. К., Шарафиев А. В. “Исследование логических операций в распределенных джозефсоновских кубитах”, Материалы 13- го международного симпозиума “Нанофизика и Наноэлектроника”, Нижний Новгород, Россия, 16-20 марта, 2009, с. 529-530. 2. Соловьев И. И., Кленов Н. В., Корнев В. К., Муханов О. А., Филиппов Т. В. “Динамический диапазон устройств на основе параллельных джозефсоновских структур”, Там же, с. 537-538. 3. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Dynamic range and high linearity issues in multi-element Josephson structures”, Extended Abstracts, Int. Supercond. Electronics Conf. (ISEC’09), 16-19 June 2009, Fukuoka, Japan, p. HF-P03 (2 pages).
Публикации сотрудников физического факультета за 2009 год 253 4. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Novel linearization method for dc SQUID voltage response”, ibid, p. SQ-P28 (2 pages). 5. Klenov N.V., Sharafiev A.V., Bakursky S.V., Kornev V.K. “Josephson Qubits with pi-junctions”, ibid, p. SP-P08 (2 pages). 6. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Dc SQUID array with nonlinear inductunces”, 9th European Conf. on Applied Superconductivity (EUCAS-09), Dresden, Germany, September 13-17, 2009, P-101. 7. Klenov N. V., Kornev V. K., Sharafiev A. V., Bakurskiy S. V., Pugach N. G. “Superconductor-ferromagnet-superconductor junctions in flux and phase qubits”, ibid, P-102. 8. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Progress in high linearity multi-element Josephson structures”, Abstracts of VI-th Int. Conf. on Vortex Matter in Nanostructured Superconductors (Vortex-VI), Rhodes, Greece, 17-24 September, 2009, PSI. JJ-05. 9. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Bi-SQUID with highly linear voltage response”, Abstracts of Int. Conf. EUROFLUX 2009, Avignon, France, 21-23 September, 2009, p. 57-58. 10. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Design tradeoff in multi-element Josephson structures”, ibid, p. 86-87. 11. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Bi-SQUID with linear transfer function”, Abstracts of Int. Conf. “Micro- and Nanoelectronics - 2009” (IC MNE), Moscow - Zvenigorod, Russua, 5-9 October 2009, P1-31. 12. Kornev V. K., Soloviev I. I., Klenov N. V., Mukhanov O. A. “Experimental study of differential SQIF-structures”, ibid, P1-40. 13. Krupenin V.A., Presnov D.E., Vlasenko V.S., Trifonov A.S., Amitonov S.V. Noise characteristics and charge sensitivity of highly doped SOI based single-electron transistor versus Al/AlO x /Al junctions based device. // Abstracts of The Third General Meeting of ACCMS-VO (Asian Consortium on Computational Material Science – Virtual Organisation), PS-26 (IMR, Tohoku University, Japan, 16-18 Feb., 2009). 14. Krupenin V.A., Presnov D.E., Vlasenko V.S., Amitonov S.V. Silicon nanowire field effect transistor as a core element for the bio- and chemical femtomolar sensors. // Abstracts of Invited Lectures and Contributed Papers of 17th Int. Symposium - Nanostructures: Physics and Technology, Minsk, Belarus, 276-277 (22-26 June 2009). 15. Krupenin V.A., Zalunin V.O., Vasenko S.A., Zorin A.B. Numerical simulation of single electron transport in disordered Cr granular films. //Ibid, 256- 257. 16. Presnov D.E., Vlasenko V.S., Amitonov S.V., Krupenin V.A. Highly doped SOI based single-electron transistor: noise characteristics and charge sensitivity. // Abstracts of Invited Lectures and Contributed Papers of The Interna-
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