Download PDF - Pan Stanford Publishing
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viii<br />
Contents<br />
4.4.4 Alignment 175<br />
4.4.5 Metallic and Semiconducting Abundances 178<br />
4.4.6 Diameter Distribution 179<br />
4.4.7 Crystallinity 179<br />
4.4.8 Purity 180<br />
4.5 Summary 181<br />
5 Fullerene-Based Electronics 189<br />
James M. Ball, Paul H. Wöbkenberg,<br />
and Thomas D. Anthopoulos<br />
5.1 Introduction 189<br />
5.2 Properties of Fullerenes 192<br />
5.2.1 Electronic Properties 193<br />
5.2.2 Thin-Film Processing 195<br />
5.2.3 Why These Properties Are Desirable for<br />
Electronics and Optoelectronics 197<br />
5.3 Thin-Film Transistors, Integrated Circuits, and OPV 198<br />
5.3.1 Thin-Film Transistors 198<br />
5.3.2 Integrated Circuits 202<br />
5.3.3 Organic Photovoltaics 205<br />
5.3.4 Charge Transport in Organic Semiconductors 208<br />
5.4 Electron Transport in Fullerene Thin-Film Transistors 211<br />
5.4.1 Electron Injection 211<br />
5.4.2 Electron Transport in C 60 ,C 70 ,andC 84 Devices 212<br />
5.4.3 Electron Transport in Solution Processed C 60 -,<br />
C 70 -, and C 84 - PCBM Devices 215<br />
5.4.4 Electron Transport in Devices with Alternative<br />
Fullerene Derivatives 216<br />
5.5 Ambipolar Transport in Fullerene Thin-Film<br />
Transistors 218<br />
5.5.1 Ambipolar Transport in Fullerene<br />
Transistors 219<br />
5.6 Fullerene-Based Microelectronics 219<br />
5.6.1 Unipolar Logic Circuits 220<br />
5.6.2 Complementary Logic Circuits 220<br />
5.6.3 Complementary-Like Logic Circuits 221<br />
5.7 Fullerene-Based Optoelectronics 222<br />
5.7.1 Fullerene-Based BHJ OPV 223