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2009 Market Slurries and Particles in CMP & a Bit ... - Techcet Group

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<strong>2009</strong> <strong>Market</strong><br />

<strong>Slurries</strong> <strong>and</strong> <strong>Particles</strong> <strong>in</strong><br />

<strong>CMP</strong> & a <strong>Bit</strong> Beyond<br />

NCCAVS <strong>CMP</strong>UG Semicon W Meet<strong>in</strong>g<br />

Karey Holl<strong>and</strong>, Ph.D.<br />

July 14, <strong>2009</strong><br />

<strong>Techcet</strong> <strong>Group</strong>, LLC.<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com<br />

www.techcet.com


<strong>Slurries</strong> & <strong>Particles</strong> <strong>in</strong> High Tech<br />

• IC <strong>CMP</strong> is by far the largest <strong>in</strong> Revenues<br />

• Si Wafer production<br />

• Cutt<strong>in</strong>g the Si Ingot <strong>in</strong>to wafers uses SiC<br />

cutt<strong>in</strong>g fluids<br />

• Si Wafer polish<strong>in</strong>g <strong>and</strong> f<strong>in</strong>al polish use high<br />

purity & excellent surface quality <strong>CMP</strong> with<br />

silicas<br />

• Lower tech applications abound … re-use<br />

of spent <strong>CMP</strong> slurries?<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 2


Major Slurry Trends<br />

• For IC manufactur<strong>in</strong>g, silica dom<strong>in</strong>ates the slurry<br />

market <strong>in</strong> amount used<br />

• For STI, ceria is preferred for more advanced<br />

technologies, but is much more expensive per<br />

gram.<br />

• For Wire Cutt<strong>in</strong>g of the Si Ingot (IC <strong>and</strong> Solar)<br />

SiC particles are used as cutt<strong>in</strong>g fluid<br />

• For Si wafer manufactur<strong>in</strong>g polish it’s silica<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com<br />

AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 3


• Silica Comes <strong>in</strong> 3 Types<br />

Silica for <strong>CMP</strong><br />

• “Fumed”: flame vapor-phase hydrolysis of SiCl 4 or the<br />

like … 3 major suppliers<br />

• “Colloidal”: precipitated from sodium silicate & H 2 SO 4 ...<br />

>8 suppliers<br />

• “Sol”: Stöber process condensation of silicon alkoxide<br />

(TEOS, TMOS) w/ ammonia & water, at least 2 major<br />

suppliers<br />

• Abrasives <strong>and</strong> Applications<br />

• Oxide/ILD ≤65nm use less aggressive particles: fumed<br />

to colloidal or milled fumed<br />

• Copper “Step 1” predom<strong>in</strong>ately uses Colloidal<br />

• Copper Barrier (<strong>and</strong> Dielectric Cap) uses Colloidal or Sol<br />

• Tungsten fumed <strong>and</strong> colloidal<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 4


Annual Revenue (M$USD)<br />

IC <strong>CMP</strong> Slurry Growth ?<br />

1,200<br />

1,000<br />

800<br />

600<br />

400<br />

200<br />

Cu Barrier<br />

Cu Step 1<br />

Tungsten<br />

Oxide<br />

☺<br />

?<br />

<br />

0<br />

S-STI<br />

2006 2007 2008 <strong>2009</strong> 2010 2011 2012<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 5


ILD Abrasive Migration<br />

140<br />

25%<br />

Revenues ($M)<br />

100<br />

60<br />

20%<br />

15%<br />

10%<br />

0<br />

Colloidal<br />

Fumed<br />

Volume %<br />

Colloidal<br />

2002 2003 2004 2005 2006 2007 2008 <strong>2009</strong><br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 6


Abrasive <strong>and</strong> Slurry<br />

Suppliers<br />

• Numerous Suppliers of Slurry (>21)<br />

• Abrasives only (>15)<br />

• <strong>Slurries</strong> only (>15)<br />

• Both Slurry <strong>and</strong> Abrasives (>6)<br />

• Unlike <strong>CMP</strong> Pads, the Slurry <strong>and</strong> Abrasive<br />

Supplier List is Stable<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com CGMG 07/2008 7<br />

AVS <strong>CMP</strong>-UG 07/<strong>2009</strong>


IC <strong>CMP</strong> Slurry <strong>Market</strong> Size<br />

by Application Revenue<br />

Cu Barrier<br />

19%<br />

S‐STI<br />

8%<br />

Oxide<br />

16%<br />

Cu Step 1<br />

28%<br />

Tungsten<br />

29%<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Suppliers<br />

Cu Barrier<br />

1 major >40%<br />

4 others >10%<br />

S‐STI<br />

1 strong supplier, >70%<br />

Oxide<br />

2 major suppliers, >30% each<br />

Cu Step 1<br />

3 suppliers split 75%<br />

2 others >9%<br />

Tungsten<br />

1 strong supplier, >75%<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Suppliers<br />

Cu Barrier<br />

S‐STI<br />

Cu Step 1<br />

Oxide<br />

2 major suppliers<br />

>30% each<br />

• Commodity bus<strong>in</strong>ess<br />

• Customer pric<strong>in</strong>g pressure<br />

• Low passes per wafer start<br />

<strong>in</strong> newer nodes<br />

• Opportunities <strong>in</strong> ≤ 45 nm<br />

Tungsten<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Suppliers<br />

Cu Barrier<br />

S‐STI<br />

Oxide<br />

Cu Step 1<br />

Tungsten<br />

1 strong supplier, >75%<br />

• Aggressive patent defense<br />

• W not large growth market<br />

• Slurry dilution &<br />

competition would erode<br />

marg<strong>in</strong>s<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Suppliers<br />

• Mostly ≤ 65 nm<br />

S‐STI<br />

Cu Barrier 1 strong supplier, >70% • S<strong>in</strong>gle process per wafer<br />

start<br />

• Cerium is costly<br />

Oxide<br />

Cu Step 1<br />

Tungsten<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


Transition to Copper<br />

100%<br />

Interconnects<br />

80%<br />

71%<br />

74%<br />

Percent Wafer Starts w/ Cu<br />

60%<br />

40%<br />

20%<br />

2%<br />

15%<br />

37%<br />

51%<br />

45%<br />

56%<br />

0%<br />

RAM MPU<br />

180 nm<br />

RAM MPU<br />

130 nm<br />

RAM MPU<br />

90 nm<br />

RAM MPU<br />

65 nm<br />

RAM MPU<br />

45 nm<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 13


IC <strong>CMP</strong> Slurry Suppliers<br />

Cu Barrier<br />

S‐STI<br />

Oxide<br />

• High growth<br />

• Transition to Cu<br />

from Al<br />

• Grow<strong>in</strong>g passes<br />

per wafer start<br />

• Customers’ priorities<br />

differ<br />

• New slurries for each<br />

new generation?<br />

Cu Step 1<br />

3 suppliers split 75%<br />

2 others >9%<br />

Tungsten<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Suppliers<br />

• High growth, but less<br />

volume than Cu polish<br />

• Customers’ priorities<br />

similar<br />

• New slurries for each<br />

new generation due to<br />

low k dielectrics?<br />

1 major >40%<br />

4 others >10%<br />

Cu Barrier<br />

S‐STI<br />

Oxide<br />

Cu Step 1<br />

Tungsten<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com


IC <strong>CMP</strong> Slurry Challenges<br />

• ILD/PMD/Oxide<br />

• Commoditization <strong>and</strong> Affect on Suppliers<br />

• Improved surface f<strong>in</strong>ish post <strong>CMP</strong><br />

• Selective STI<br />

• Lower Defects <strong>and</strong> Lower Cost (Ceria Expense)<br />

• Tungsten<br />

• Lower Defects <strong>and</strong> Lower Cost (Competition)<br />

• Copper <strong>and</strong> Barrier<br />

• Each Cu Node Expects a New Formulation<br />

• Costly for Supplier, Pricy for End User<br />

• FEOL Polish<br />

• Polish of ILD thru poly gate prior to poly etchback <strong>and</strong><br />

metal gates<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 16


Si Wafer <strong>and</strong> Slurry<br />

• SiC for Si <strong>in</strong>got slic<strong>in</strong>g not a large market<br />

• Solar use is >5x the volume of IC wafers<br />

• SiC revenues will approach $40M <strong>in</strong> <strong>2009</strong><br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 17


Slurry Disposal<br />

• Lower tech applications abound<br />

• Reclaim <strong>and</strong> re-use of spent <strong>CMP</strong> slurries<br />

• Concentrate used slurry<br />

• Reduce heavy metal contam<strong>in</strong>ation<br />

• Road filler or ??<br />

• Does it pay to be green?<br />

KHoll<strong>and</strong>@<strong>Techcet</strong>.com AVS <strong>CMP</strong>-UG 07/<strong>2009</strong> 18


The <strong>Techcet</strong> <strong>Group</strong>, LLC<br />

• <strong>Techcet</strong> Partners<br />

• John Housley<br />

• Lita Shon-Roy<br />

• Steven Holl<strong>and</strong>, Ph.D.<br />

• Karey Holl<strong>and</strong>, Ph.D.<br />

• <strong>CMP</strong> Technical Associates<br />

• Michael Fury, Ph.D.<br />

• Robert Rhoades, Ph.D.<br />

© <strong>2009</strong> <strong>Techcet</strong> <strong>Group</strong>, LLC<br />

NCCAVS <strong>CMP</strong>UG<br />

July 14, <strong>2009</strong> 19


The <strong>Techcet</strong> <strong>Group</strong>, LLC<br />

• <strong>2009</strong> <strong>CMP</strong> Report Orders<br />

• Lita Shon-Roy<br />

• 925-413-9373<br />

• LShonRoy@<strong>Techcet</strong>.com<br />

• Karey Holl<strong>and</strong><br />

• 503-647-5440<br />

• KHoll<strong>and</strong>@<strong>Techcet</strong>.com<br />

• Fax 480-275-3101<br />

© <strong>2009</strong> <strong>Techcet</strong> <strong>Group</strong>, LLC<br />

NCCAVS <strong>CMP</strong>UG<br />

July 14, <strong>2009</strong> 20

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