Electronics and Telecommunication Engineering - Vishwakarma ...

Bansilal Ramnath Agarwal Charitable Trust’s
Vishwakarma Institute of Technology, Pune – 411 037
Department of Electronics and Telecommunication Engineering
FF No.: 654
EC30106:: POWER ELECTRONICS
Credits: 03
Teaching Scheme: - Theory 3 Hrs/Week
Prerequisites: Basics of semiconductor devices, Fourier series analysis approach
Objectives:
• To explain the necessity of power conversion.
• To discuss physics & applications of various devices used for conversion
• To explain techniques & control of power conversions
• To apply analytical tools for performance evaluation
• Mapping with PEOs:1,2,3,6,7,8,9
Unit I
POWER DEVICES
(10 Hrs)
A. Structural modifications for power devices.
Structure, Characteristics, ratings of Power Diode SCR, GTO, IGBT. Comparison of
above devices with Power MOSFET & Power BJT. Driver Circuits (isolated & nonisolated)
for IGBT & SCR. Commutation circuits for SCR. Protection circuits for IGBT
& SCR
B. Comparison of all power devices and suitability for applications.
Silicon Carbide (SiC), Gallium Nitride (GaN)-based power devices. Suitability of these
devices for high power circuits.
Unit II
CONTROLLED RECTIFIER
(8 Hrs)
A. Concept of line commutation.
Single-phase half wave and full wave controlled rectifier: Circuit diagram, operation,
waveforms for resistive and level (highly inductive) loads.
Single phase semi and full bridge controlled rectifier: Circuit diagram, operation,
waveforms for R, L and RLE loads. Average and RMS expressions for o/p voltage.
Fourier analysis of supply current. Performance metrics: Fundamental power factor,
Current distortion factor, Active, reactive & apparent power.
B. Numerical based on converters.
Structure & Syllabus of B.E (E&TC) Program – Pattern ‘C11’, Rev01, dt. 2/4/2011
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