2N6045 NPN Darlington Power Transistor

(PNP) 2N6040, 2N6042,
(NPN) 2N6043*, 2N6045*
*Preferred Device
Plastic Medium−Power
Complementary Silicon
Transistors
. . . designed for general−purpose amplifier and low−speed
switching applications.
• High DC Current Gain −
h FE = 2500 (Typ) @ I C = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
V CEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
= 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
V CE(sat) = 2.0 Vdc (Max) @ I C = 4.0 Adc − 2N6043,44
= 2.0 Vdc (Max) @ I C = 3.0 Adc − 2N6042,
2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• EPOXY MEETS UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
MAXIMUM RATINGS (Note 1)
Rating
Symbol
2N6040 2N6042
2N6043 2N6045 Unit
ÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎ
V ÎÎÎÎ
ÎÎÎÎ
CEO 60 100 Vdc
ÎÎ
ÎÎÎÎÎÎÎÎÎÎ
Collector−Base Voltage
ÎÎÎ
V ÎÎÎÎ ÎÎÎÎ
ÎÎ
CB 60 100 Vdc
ÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎ
V ÎÎÎÎÎÎÎ
EB 5.0
Vdc
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current−
Base Current
Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎ ÎÎ
ÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
I C
8.0
16
Total ÎÎÎ
Power ÎÎÎÎÎÎÎÎÎÎ
Dissipation
P D
ÎÎÎÎÎÎÎÎ
@ T C
ÎÎ
= 25°C
ÎÎÎÎÎÎÎ
ÎÎÎ
75
W
ÎÎÎÎÎÎÎÎÎÎ
Derate above 25°C
I B
Adc
ÎÎ
120 mAdc
0.60
W/°C
ÎÎ
Operating and Storage
ÎÎÎ
Junction,
ÎÎÎÎÎÎÎÎÎÎT J , T
ÎÎÎÎÎÎÎ
stg °C
ÎÎÎÎÎÎÎÎ
ÎÎÎ
Temperature Range
ÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
– 65 to + 150
ÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SymbolÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to
Case
ÎÎ
1.67 °C/W
ÎÎ
JC ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎ
Thermal Resistance, Junction to JA 57
°C/W
Ambient
1. Indicates JEDEC Registered Data.
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
4
1 2 3
TO−220AB
CASE 221A−09
Style 1
xxxx
A
Y
WW
http://onsemi.com
DARLINGTON, 8 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 V − 100 V, 75 W
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
= Specific Device Code:
6040, 6042, 6043, 6045
= Assembly Location
= Year
= Work Week
MARKING
DIAGRAM
AYWW
2Nxxxx
ORDERING INFORMATION
Device Package Shipping
2N6040 TO−220AB 50 Units / Rail
2N6042 TO−220AB 50 Units / Rail
2N6043 TO−220AB 50 Units / Rail
2N6045 TO−220AB 50 Units / Rail
*Preferred devices are recommended choices for future
use and best overall value.
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
© Semiconductor Components Industries, LLC, 2003
August, 2003 − Rev. 5
1 Publication Order Number:
2N6040/D

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
T A
T A
T C
4.0
T C
80
PD, POWER DISSIPATION (WATTS)
3.0
2.0
1.0
60
40
20
0
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
*ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
Symbol
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I C = 100 mAdc, I B = 0) 2N6040, 2N6043
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2N6042, 2N6045
V CEO(sus)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(V CE = 60 Vdc, I B = 0) 2N6040, 2N6043
(V CE = 100 Vdc, I B = 0) 2N6042, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(V CE = 60 Vdc, V BE(off) = 1.5 Vdc) 2N6040, 2N6043
(V CE = 100 Vdc, V BE(off) = 1.5 Vdc) 2N6042, 2N6045
(V CE = 60 Vdc, V BE(off) = 1.5 Vdc, T C = 150°C) 2N6040, 2N6043
(V CE = 80 Vdc, V BE(off) = 1.5 Vdc, T C = 150°C) 2N6041, 2N6044
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(V CE = 100 Vdc, V BE(off) = 1.5 Vdc, T C = 150°C) 2N6042, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
I CBO
A
Collector Cutoff Current
(V CB = 60 Vdc, I E = 0) 2N6040, 2N6043
I CEO
I CEX
60
100
−
−
−
−
−
−
−
−
−
−
20
20
20
20
200
200
200
20
Vdc
A
A
(V CB = 100 Vdc, I E = 0) 2N6042, 2N6045
−
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
DC Current Gain
(I C = 4.0 Adc, V CE = 4.0 Vdc) 2N6040, 2N6043,
(I C = 3.0 Adc, V CE = 4.0 Vdc) 2N6042, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(I C = 8.0 Adc, V CE = 4.0 Vdc) All Types
Collector−Emitter Saturation Voltage
(I C = 4.0 Adc, I B = 16 mAdc) 2N6040, 2N6043,
(I C = 3.0 Adc, I B = 12 mAdc) 2N6042, 2N6045
I EBO
−
ÎÎÎ
2.0 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(I C = 8.0 Adc, I B = 80 Adc) All Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (I C = 8.0 Adc, I B = 80 mAdc)
Base−Emitter On Voltage (I C = 4.0 Adc, V CE = 4.0 Vdc)
h FE
V CE(sat)
V BE(sat)
1000
1000
100
20.000
20,000
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small Signal Current Gain (I
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
C = 3.0 Adc, V CE = 4.0 Vdc, f = 1.0 MHz)
|h fe | 4.0 −
Output Capacitance
2N6040/2N6042
(V CB = 10 Vdc, I E = 0, f = 0.1 MHz) 2N6043/2N6045
V BE(on)
C ob
−
−
−
−
−
−
−
2.0
2.0
4.0
−
Vdc
ÎÎÎ
4.5 Vdc
ÎÎÎ
2.8 Vdc
300 pF
200 ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc, f =
ÎÎÎÎÎÎÎ
1.0 kHz)
300 − −
ÎÎÎ
ÎÎÎÎ
*Indicates JEDEC Registered Data.
h fe
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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2

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D 1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I B ≈ 100 mA
MSD6100 USED BELOW I B ≈ 100 mA
V 2
approx
+8.0 V
0
V 1
approx
−12 V
t r , t f ≤ 10 ns
DUTY CYCLE = 1.0%
25 s
51
Figure 2. Switching Times Equivalent Circuit
R B
D 1
+4.0 V
≈ 8.0 k
R C
TUT
≈120
V CC
−30 V
SCOPE
for t d and t r , D 1 is disconnected
and V 2 = 0
For NPN test circuit reverse all polarities and D1.
t, TIME (s) µ
5.0
3.0
2.0
1.0
0.7
0.5
t s
0.3
t r
0.2
V CC = 30 V
I C /I B = 250
I B1 = I B2
0.1 T J = 25°C
0.07
PNP t d @ V BE(off) = 0 V
NPN
0.05
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C , COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
t f
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE 0.01
JC (t) = r(t) JC
JC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) − T C = P (pk) JC (t)
P (pk)
t 1
t 2
DUTY CYCLE, D = t 1 /t 2
0.01
0.01
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
500 s
1.0ms
dc
T J = 150°C 5.0ms
BONDING WIRE LIMITED
THERMALLY LIMITED @ T C = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED V CEO
2N6040, 2N6043
2N6045
100 s
2.0 3.0 5.0 7.0 10 20 30 50 70 100
V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150°C; T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150°C. T J(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
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3

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
hfe, SMALL−SIGNAL CURRENT GAIN
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
T C = 25°C
V CE = 4.0 Vdc
I C = 3.0 Adc
PNP
NPN
C, CAPACITANCE (pF)
300
200
100
70
50
T J = 25°C
30
2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz)
V R , REVERSE VOLTAGE (VOLTS)
PNP
NPN
C ib
C ob
Figure 6. Small−Signal Current Gain
Figure 7. Capacitance
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4

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
hFE, DC CURRENT GAIN
20,000
10,000
7000
5000
3000
2000
1000
700
500
T J = 150°C
25°C
−55°C
V CE = 4.0 V
hFE, DC CURRENT GAIN
20,000
10,000
7000
5000
3000
2000
1000
700
500
T J = 150°C
25°C
−55°C
V CE = 4.0 V
300
200
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C , COLLECTOR CURRENT (AMP)
300
200
0.1
Figure 8. DC Current Gain
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C , COLLECTOR CURRENT (AMP)
V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0
2.6
2.2
1.8
1.4
1.0
0.3
I C = 2.0 A
4.0 A
6.0 A
T J = 25°C
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I B , BASE CURRENT (mA)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3.0
2.6
2.2
1.8
1.4
1.0
0.3
Figure 9. Collector Saturation Region
I C = 2.0 A 4.0 A 6.0 A
I B , BASE CURRENT (mA)
T J = 25°C
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
3.0
T J = 25°C
3.0
T J = 25°C
2.5
2.5
V, VOLTAGE (VOLTS)
2.0
1.5
1.0
0.5
0.1
V BE @ V CE = 4.0 V
V BE(sat) @ I C /I B = 250
V CE(sat) @ I C /I B = 250
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010
V, VOLTAGE (VOLTS)
2.0
1.5 V BE(sat) @ I C /I B = 250
V BE @ V CE = 4.0 V
1.0
V CE(sat) @ I C /I B = 250
0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I C , COLLECTOR CURRENT (AMP)
I C , COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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5

(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AA
H
Q
Z
L
V
G
B
4
1 2 3
N
D
A
K
F
T
U
S
R
J
C
−T−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04
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2N6040/D