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Research Profile - Department of Materials Science and Metallurgy ...

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Zoe Barber<br />

Senior Lecturer<br />

MA University <strong>of</strong> Cambridge<br />

PhD University <strong>of</strong> Cambridge<br />

+44 (0) 1223 334326<br />

zb10@cam.ac.uk<br />

www.msm.cam.ac.uk/dmg/<br />

Thin-Film Deposition<br />

My research interests are based around thin-film deposition<br />

using a range <strong>of</strong> techniques: magnetron sputtering, ionized<br />

sputter deposition, pulsed-laser ablation <strong>and</strong> sol-gel fabrication.<br />

Within the Device <strong>Materials</strong> Group we are developing <strong>and</strong><br />

optimizing the growth <strong>of</strong> many different thin-film device materials,<br />

which may be amorphous, polycrystalline or single crystal.<br />

These include magnetic alloys <strong>and</strong> compounds, ferroelectrics,<br />

dielectrics, superconductors, multiferroics, as well as tunnel<br />

barriers, buffer layers, contacts <strong>and</strong> encapsulation layers.<br />

In relation to a wider range <strong>of</strong> thin-film applications we are<br />

investigating ultra-hard coatings (e.g. nano-composites,<br />

epitaxial nitride multilayers); biomedical coatings (e.g. doped<br />

hydroxyapatite); shape-memory metals <strong>and</strong> precise freest<strong>and</strong>ing<br />

structures for nanotechnology applications; <strong>and</strong><br />

multilayers for X-ray mirrors <strong>and</strong> for studies <strong>of</strong> interdiffusion.<br />

Spintronics<br />

To optimize spin-dependent transport between ferromagnetic<br />

metals <strong>and</strong> semiconductors we are developing methods for<br />

the deposition <strong>of</strong> ferromagnetic electrodes on insulating tunnel<br />

barriers on semiconductors. This requires careful preparation<br />

<strong>of</strong> the semiconductor surface using in-situ surface-cleaning<br />

techniques in an ultra-high vacuum deposition system.<br />

Superconducting junctions<br />

Measurement <strong>of</strong> the spectrum <strong>of</strong> quantum fluctuations in<br />

niobium-nitride-based superconducting tunnel junctions<br />

may answer questions about the source <strong>of</strong> dark energy in<br />

the universe. We are developing <strong>and</strong> optimising the fabrication<br />

<strong>of</strong> very high critical current density, shunted NbN junctions for<br />

this application.<br />

Film growth techniques are being developed to further improve<br />

the control <strong>of</strong> film structure (e.g. ion-enhanced deposition), <strong>and</strong><br />

we are using optical emission spectroscopy <strong>and</strong> plasma probes<br />

for detailed diagnostics <strong>of</strong> the film growth environment.<br />

XB Hu, A Garg & ZH Barber, “Deposition <strong>and</strong> characterization <strong>of</strong> pulsedlaser-deposited<br />

<strong>and</strong> chemical-solution-derived Sm-substituted bismuth<br />

titanate films” Integrated Ferroelectrics 79, 113–121 (2006).<br />

LJ Singh, CW Leung, C Bell, JL Prieto & ZH Barber, “Magnetoresistance<br />

<strong>of</strong> spin valve structures based on the full Heusler alloy Co 2<br />

MnSi” J. Appl.<br />

Phys. 100, 013910 (2006).<br />

ES Thian, J Huang, ME Vickers, SM Best, ZH Barber & W Bonfield,<br />

“Silicon-substituted hydroxyapatite (SiHA): A novel calcium phosphate<br />

coating for biomedical applications” J. Mater. Sci. 41, 709–717 (2006).<br />

S Sanjabi, SK Sadrnezhaad & ZH Barber, “Sputter alloying <strong>of</strong> Ni, Ti <strong>and</strong> Hf<br />

for fabrication <strong>of</strong> high temperature shape memory thin films” Mater. Sci.<br />

Technol. 23, 987–991 (2007).<br />

MA Moram, Y Zhang, MJ Kappers, ZH Barber & CJ Humphreys<br />

“Dislocation reduction in gallium nitride films using sc<strong>and</strong>ium nitride<br />

interlayers” Appl. Phys. Lett. 91, 152101 (2007).<br />

Extremely precise fabrication <strong>of</strong> thin films <strong>and</strong> heterostructures is<br />

performed in ultra-high vacuum deposition systems. The diameter<br />

<strong>of</strong> the main chamber shown is 0.6 m<br />

<strong>Research</strong> <strong>Pr<strong>of</strong>ile</strong> 5

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