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Academic Staff Profile - Universiti Tenaga Nasional

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2. Pin Jern Ker, John P. R. David and Chee Hing Tan, “Temperature<br />

dependence of gain and excess noise in InAs electron avalanche<br />

photodiodes,” Optics Express, vol. 20, no. 28, Dec. 2012.<br />

3. Andrew Marshall, Pin Jern Ker, Andrey Krysa, John David and<br />

Chee Hing Tan, “High speed InAs electron avalanche photodiodes<br />

overcome the conventional gain-bandwidth product limit,” Optics<br />

Express, vol. 19, no. 23, Nov. 2011. (Published by Laser Focus<br />

World Magazine, vol. 47, issue 12, December 2011)<br />

4. Rajiv B. Gomes, Chee Hing Tan, Pin Jern Ker, John P. R. David<br />

and Jo Shien Ng, “InAs avalanche photodiodes for X-Ray<br />

detection,” Journal of Instrumentation, vol. 6, P12005, Dec. 2011.<br />

5. Pin Jern Ker, Andrew R. J. Marshall, Andrey B. Krysa, John P.<br />

R. David and Chee Hing Tan, “Low noise high responsivity InAs<br />

avalanche photodiodes for infrared sensing,” Physica Status Solidi<br />

(c), vol. 9, no. 2, pp. 310-313, Dec. 2011.<br />

6. Pin Jern Ker, Andrew R. J. Marshall, Andrey B. Krysa, John P.<br />

R. David and Chee Hing Tan, “Temperature dependence of<br />

leakage current in InAs avalanche photodiodes,” IEEE Journal of<br />

Quantum Electronic, vol. 47, no. 8, pg. 1123-1128, Aug. 2011.<br />

7. Andrew R. J. Marshall, Peter Vines, Pin Jern Ker, John P. R.<br />

David and Chee Hing Tan, “Avalanche multiplication and excess<br />

noise in InAs electron avalanche photodiodes at 77K,” IEEE<br />

Journal of Quantum Electronic, vol. 47, no. 6, pp. 858-864, June<br />

2011.<br />

Conferences<br />

1. Shiyong Zhang, Pin Jern Ker, John P. R. David and Chee Hing<br />

Tan, “Background doping reduction in MBE grown InAs for<br />

electron avalanche photodiodes,” 17 th International conference on<br />

Molecular Beam Epitaxy (MBE 2012), Nara Japan, Sept. 2012.<br />

2. Pin Jern Ker, Ian Sandall, Jo Shien Ng, John P. R. David and<br />

Chee Hing Tan, “Low noise InAs electron avalanche photodiodes<br />

for imaging applications,” Photon 12 conference, Durham UK,<br />

Sept. 2012.<br />

3. I. Sandall, P. J. Ker, J. S. Ng, J. P. R. David and C. H. Tan,<br />

“Planar InAs photodiodes fabricated using ion implantation,”<br />

Photon 12 conference, Durham UK, Sept. 2012.<br />

4. S. Butera, R. Warburton, I. Sandall, P. J. Ker, C. H. Tan, G. Buller<br />

and P. Vines, “Towards single photon avalanche diode detectors<br />

using narrow bandgap InAs,” Photon 12 conference, Durham UK,<br />

Sept. 2012.<br />

5. Pin Jern Ker, Andrew Marshall, Andrey Krysa, John David and<br />

Chee Hing Tan, “Exploiting the characteristics of InAs electron<br />

avalanche photodiodes for unlimited gain-bandwidth product,” 39 th

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