Integrated Copper CMP Barrier Slurry Development to Achieve ...

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Development Model Summary Dishing/Total ILD Loss vs. TEOS:Cu Selectivity 1000 800 100um 50um 90% 70% 10um 0.25um OF Dishing/Total Loss (Ang) 600 400 200 0 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 -200 -400 -600 Negative values indicate protruding copper TEOS:Cu Selectivity CONFIDENTIAL – RODEL, INC. – 8/02
Development Model Summary TEOS:Cu selectivity correlates closely with the degree of feature nonplanarity observed (dishing) For the incoming topography generated with Rodel’s 1st step copper process, minimum final dishing was obtained with a TEOS:Cu selectivity of 1.3-1.4 For TEOS:Cu selectivities well above two, excessive oxide removal results in protrusion of Cu features above the wafer plane For TEOS: Cu selectivities below two, the higher copper rate affords increasing Cu recess as selectivity decreases. Ta and TaN barrier removal rates can be tuned to > 500 Å/min for high throughput ILD loss is generally between 100-300 Å after two-step Rodel Cu process (copper slurry EPL2361 followed by barrier slurry CUS1331) CONFIDENTIAL – RODEL, INC. – 8/02
Page 1 and 2: Integrated Copper CMP Barrier Slurr
Page 3 and 4: Development of Tunable Formulations
Page 5: Predictive Value of Development Mod
Page 9 and 10: Attributes of CUS1300 Family Barrie
Page 11: Acknowledgments Christine Ye, Scien

Integrated Copper CMP Barrier Slurry Development to Achieve ...

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