2.1 Ultrafast solid-state lasers - ETH - the Keller Group

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70 2.1.3 Overview of ultrafast solid-state lasers [Ref. p. 134 Table 2.1.4. Passively mode-locked Vertical External Cavity Surface Emitting semiconductor Lasers (VECSELs) using different mode-locking techniques. “Best” means in terms of pulse duration, highest average output power, highest pulse repetition rate etc. – the result for which “best” applies is in bold letters. The VECSELs are either electrically pumped (EP-VECSELs) or optically pumped using diode lasers (OP-VECSELs). ML: Mode-Locking. QW: Quantum Well. λ0: center lasing wavelength. τp: measured pulse duration. Pav,out: average output power. frep: pulse repetition rate. Laser material ML λ0 τp Pav,out frep Remarks Ref. ML OP-VECSEL GaAs-based GaAs/AlGaAs QWs active 850 nm 100 ps acousto-optic modulator [99Hol] InGaAs-based 12 InGaAs/GaAs QWs SESAM 1030 nm 22 ps 20 mW 4.4 GHz first passively ML VECSEL [00Hoo] 9 InGaAs/GaAs QWs 950 nm 3.2 ps 213 mW 2 GHz [01Hae2] 7 InGaAs/GaAs QWs 1040 nm 15 ps < 100 mW 2.1 GHz harmonic mode-locking [07Saa] 6 InGaAs/GaAsP QWs 1030 nm 13.2 ps 16 mW 328 MHz [01Gar] 1040 nm 477 fs 100 mW 1.21 GHz strain-balanced InGaAs QW [02Gar] 6 InGaAs/GaAs QWs 1034 nm 486 fs 30 mW 10 GHz [05Hoo] 5 InGaAs/GaAs QWs 950 nm 15 ps 3.9 ps 7 InGaAs/GaAsP QWs 980 nm 960 nm 13 InGaAs/AlGaAsP + intracavity LBO 9.7 ps 4.7 ps 950 mW 530 mW 55 mW 25 mW 6 GHz soliton-like pulse shaping in the positive GVD regime [02Pas] 21 GHz 30 GHz low saturation QD-SESAM 1:1 ML for the first time towards wafer scale integration [02Hae] [04Lor] 957 nm 4.7 ps 2.1 W 4 GHz [05Asc1] 960 nm 6.1 ps 1.4 W 10 GHz [05Asc2] 960 nm 3 ps 100 mW 50 GHz [06Lor] 975 nm 489 nm 3.8 ps 3.9 ps 83 mW 6mW 1.88 GHz 1.88 GHz [05Cas] (continued) Landolt-Börnstein New Series VIII/1B1
Ref. p. 134] 2.1 Ultrafast solid-state lasers 71 Table 2.1.4 continued. Laser material ML λ0 τp Pav,out frep Remarks Ref. InGaAsP-based 7 InGaAsP QWs 1.5 μm 6.5 ps 13.5 mW 1.34 GHz [03Hoo] 20 InGaAsP/InGaAsP QWs 1.554 μm 3.2 ps 120 mW 2.97 GHz [05Lin2] ML EP-VECSEL InGaAs-based GaAs/AlGaAs QWs active 830 nm 81 ps 4 mW 960 MHz quasi-cw, liquid N2 cryostat cooling 7 InGaAs/GaAs QWs SESAM 980 nm 57 ps 40 mW 1.1 GHz first electrically pumped passively ML VECSEL [93Jia] [03Jas] 14.8 ps ≈ 10 mW 15 GHz novel compact linear cavity [04Jas] 50 ps 30 mW 6 GHz SA dynamics [05Zha2] [04Zha2] Landolt-Börnstein New Series VIII/1B1
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