2.1 Ultrafast solid-state lasers - ETH - the Keller Group

70 2.1.3 Overview of ultrafast solid-state lasers [Ref. p. 134
Table 2.1.4. Passively mode-locked Vertical External Cavity Surface Emitting semiconductor Lasers (VECSELs) using different mode-locking techniques.
“Best” means in terms of pulse duration, highest average output power, highest pulse repetition rate etc. – the result for which “best” applies is in bold
letters. The VECSELs are either electrically pumped (EP-VECSELs) or optically pumped using diode lasers (OP-VECSELs). ML: Mode-Locking. QW:
Quantum Well. λ0: center lasing wavelength. τp: measured pulse duration. Pav,out: average output power. frep: pulse repetition rate.
Laser material ML λ0 τp Pav,out frep Remarks Ref.
ML OP-VECSEL
GaAs-based
GaAs/AlGaAs QWs active 850 nm 100 ps acousto-optic modulator [99Hol]
InGaAs-based
12 InGaAs/GaAs QWs SESAM 1030 nm 22 ps 20 mW 4.4 GHz first passively ML VECSEL [00Hoo]
9 InGaAs/GaAs QWs 950 nm 3.2 ps 213 mW 2 GHz [01Hae2]
7 InGaAs/GaAs QWs 1040 nm 15 ps < 100 mW 2.1 GHz harmonic mode-locking [07Saa]
6 InGaAs/GaAsP QWs 1030 nm 13.2 ps 16 mW 328 MHz [01Gar]
1040 nm 477 fs 100 mW 1.21 GHz strain-balanced InGaAs QW [02Gar]
6 InGaAs/GaAs QWs 1034 nm 486 fs 30 mW 10 GHz [05Hoo]
5 InGaAs/GaAs QWs 950 nm 15 ps
3.9 ps
7 InGaAs/GaAsP QWs 980 nm
960 nm
13 InGaAs/AlGaAsP
+ intracavity LBO
9.7 ps
4.7 ps
950 mW
530 mW
55 mW
25 mW
6 GHz soliton-like pulse shaping in the
positive GVD regime [02Pas]
21 GHz
30 GHz
low saturation QD-SESAM
1:1 ML for the first time
towards wafer scale integration
[02Hae]
[04Lor]
957 nm 4.7 ps 2.1 W 4 GHz [05Asc1]
960 nm 6.1 ps 1.4 W 10 GHz [05Asc2]
960 nm 3 ps 100 mW 50 GHz [06Lor]
975 nm
489 nm
3.8 ps
3.9 ps
83 mW
6mW
1.88 GHz
1.88 GHz
[05Cas]
(continued)
Landolt-Börnstein
New Series VIII/1B1