2.1 Ultrafast solid-state lasers - ETH - the Keller Group

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64 2.1.3 Overview of ultrafast solid-state lasers [Ref. p. 134 Table 2.1.3. Q-switched microchip lasers using different techniques. First microchip laser introduced by Zayhowski and Mooradian [89Zay]. “Best” means in terms of pulse duration, highest average output power, highest pulse repetition rate etc. – the result for which “best” applies is in bold letters. The lasers are assumed to be diode-pumped, if not stated otherwise. SESAM: passive Q-switching using SEmiconductor Saturable Absorber Mirrors (SESAMs). EOM: Electro-Optic phase Modulator. λ0: center lasing wavelength. τp: measured pulse duration. Ep: pulse energy. frep: pulse repetition rate. Laser material ML technique λ0 τp Ep frep Remarks Ref. Nd:YAG active-EOM 1.064 μm 760 ps 4 kHz pumped by Q-switched intracavity SHG Nd:YAG laser 270 ps 6.8 μJ 5 kHz pulse width increases with increased frep for 5–500 kHz: 13.3 ns at 500 kHz [89Zay] [92Zay] Cr 4+ :YAG 337 ps 11 μJ 6 kHz [94Zay] 148 ps 4 kHz optimization for max. energy [04Bur] [03Zay] Nd:YVO4 active-EOM 1.064 μm 115 ps 12 μJ 1 kHz [95Zay] SESAM 1.064 μm 56 ps 62 nJ 85 kHz 1.1 kW peak, 5.3 mW average [97Bra] 68 ps 0.37 μJ 160 kHz 5.4 kW peak, 58 mW average [97Bra] 143 ps 48 nJ Output Coupling (OC) SESAM [01Spu1] 37 ps 53 nJ 160 kHz 1.4 kW peak, 8.5 mW average [99Spu1, 01Spu3] 117 ps 0.16 μJ 510 kHz 1.4 kW peak, 82 mW average [99Spu1, 01Spu3] 181 ps 0.28 μJ 440 kHz 1.6 kW peak, 120 mW average [99Spu1, 01Spu3] 2.64 ns 45 nJ 7.8 MHz 17 W peak, 350 mW average [99Spu1, 01Spu3] 1.34 μm 230 ps 53 kHz 450 kW peak [97Flu] (continued) Landolt-Börnstein New Series VIII/1B1
Ref. p. 134] 2.1 Ultrafast solid-state lasers 65 Table 2.1.3 continued. Laser material ML technique λ0 τp Ep frep Remarks Ref. Nd:LSB SESAM 1.062 μm 180 ps 0.1 μJ 110 kHz [96Bra1] Cr 4+ :YAG 1.063 μm 650 ps 3–4 μJ [05Voi] Yb:YAG SESAM 1.03 μm 530 ps 1.1 μJ 12 kHz 1.9 kW peak [01Spu2] Er:Yb:glass SESAM 1.535 μm 1.2 ns 45 nJ 47 kHz 2.1 mW average [98Flu] ≈ 1.5 μm 840 ps 11.2 μJ 1.4 kHz 16 mW average, 10.6 kW peak [01Hae1] p-i-n modulator 1.553 μm 56 ns 470 nJ 10 kHz previously p-i-n modulator for ML [95Bro3] [01Han] Cr:YAG ≈ 1.5 μm 42 ns 1 MHz diode-pumped Nd:YVO4 pumped, Q-switched ML [01Sch] Landolt-Börnstein New Series VIII/1B1
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2.1 Ultrafast solid-state lasers - ETH - the Keller Group

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