2.1 Ultrafast solid-state lasers - ETH - the Keller Group

64 2.1.3 Overview of ultrafast solid-state lasers [Ref. p. 134
Table 2.1.3. Q-switched microchip lasers using different techniques. First microchip laser introduced by Zayhowski and Mooradian [89Zay]. “Best” means
in terms of pulse duration, highest average output power, highest pulse repetition rate etc. – the result for which “best” applies is in bold letters. The lasers
are assumed to be diode-pumped, if not stated otherwise. SESAM: passive Q-switching using SEmiconductor Saturable Absorber Mirrors (SESAMs). EOM:
Electro-Optic phase Modulator. λ0: center lasing wavelength. τp: measured pulse duration. Ep: pulse energy. frep: pulse repetition rate.
Laser material ML technique λ0 τp Ep frep Remarks Ref.
Nd:YAG
active-EOM 1.064 μm 760 ps 4 kHz pumped by Q-switched intracavity
SHG Nd:YAG laser
270 ps 6.8 μJ 5 kHz pulse width increases with increased
frep for 5–500 kHz: 13.3 ns at 500 kHz
[89Zay]
[92Zay]
Cr 4+ :YAG 337 ps 11 μJ 6 kHz [94Zay]
148 ps 4 kHz optimization for max. energy [04Bur] [03Zay]
Nd:YVO4
active-EOM 1.064 μm 115 ps 12 μJ 1 kHz [95Zay]
SESAM 1.064 μm 56 ps 62 nJ 85 kHz 1.1 kW peak, 5.3 mW average [97Bra]
68 ps 0.37 μJ 160 kHz 5.4 kW peak, 58 mW average [97Bra]
143 ps 48 nJ Output Coupling (OC) SESAM [01Spu1]
37 ps 53 nJ 160 kHz 1.4 kW peak, 8.5 mW average [99Spu1,
01Spu3]
117 ps 0.16 μJ 510 kHz 1.4 kW peak, 82 mW average [99Spu1,
01Spu3]
181 ps 0.28 μJ 440 kHz 1.6 kW peak, 120 mW average [99Spu1,
01Spu3]
2.64 ns 45 nJ 7.8 MHz 17 W peak, 350 mW average [99Spu1,
01Spu3]
1.34 μm 230 ps 53 kHz 450 kW peak [97Flu]
(continued)
Landolt-Börnstein
New Series VIII/1B1