2.1 Ultrafast solid-state lasers - ETH - the Keller Group

Ref. p. 134] 2.1 Ultrafast solid-state lasers 55
Table 2.1.2 continued.
Laser material ML technique λ0 τp Pav,out frep Remarks Ref.
Nd:YAP
Nd:YAlO3 active AOM 1.08 μm 10 ps 220 mW [96Guy]
SESAM 930 nm 1.9 ps 410 mW 178 MHz [98Kel]
nonlinear mirror ML 1.08 μm
1.34 μm
1.34 μm 24 ps 7 W on-time GaInNAs-SESAM but only
quasi-cw mode-locking
demonstrated
50 ps
15 ps
[02Sun]
LiIO3 frequency doubler [91Sta]
1.08 μm 31 ps pure passive ML unstable,
thus used additionally AOM
[99Agn]
Nd:KGW
Nd 3+ :KGd(WO4)2 active-FM 1.067 μm 12 ps 200 MHz [95Flo]
KLM 1.067 μm 1.7 ps [96Let]
CCM-APM 1.067 μm 2.3 ps 850 mW 76.5 MHz [02Maj1]
SESAM 1.067 μm 6.3 ps 1 W 64.5 MHz [02Maj2]
Nd:GdVO4
SESAM 1.064 μm 9.2 ps 5.4 W 119 MHz [03He]
8 ps 600 mW 154 MHz [03Zha]
11.5 ps 4.9 W 140 MHz [04Zha1]
18.9 ps 3.46 W 0.37–3.4 GHz GaAs wafer SESAM [04Kon]
12 ps 500 mW 9.66 GHz [04Kra2]
(continued)
Landolt-Börnstein
New Series VIII/1B1