2.1 Ultrafast solid-state lasers - ETH - the Keller Group

52 2.1.3 Overview of ultrafast solid-state lasers [Ref. p. 134
Table 2.1.2 continued.
Laser material ML technique λ0 τp Pav,out frep Remarks Ref.
active MQW 1.047 μm 200 ps 27 mW 100 MHz semiconductor Multiple-
Quantum-Well (MQW)
modulator
active piezoelectric
diffraction modulator
[95Bro3]
1.047 μm 7 ps 160 mW 160 MHz [90Juh]
KLM 1.047 μm 3 ps 250 mW [94Lin2]
2.3 ps 800 mW 82 MHz lamp-pumped, microdot
mirror
[93Ram1]
SESAM 1.047 μm 3.3 ps 700 mW 220 MHz Ti:sapphire laser pumped [92Kel2]
5.1 ps 225 mW 100 MHz [93Wei]
2.8 ps 460 mW 220 MHz [94Kel]
1.3 μm 5.7 ps 130 mW 98 MHz [96Flu2]
> 22 ps < 20 W
on-time
GaInNAs-SESAM but only
quasi-cw mode-locking
demonstrated
[02Sun]
6.7 ps 580 mW 117 MHz GaInNAs-SESAM [04Liv]
48 ps 630 mW 119 MHz detailed studies about
ML stability above the
Q-switched mode-locking
threshold
21 ps 127 mW 1.4 GHz low-loss buried resonant
GaInNAs SESAM
[04Sch1]
[06Zel]
1.053 μm 70 ps ...4 ns < 680 mW [02Rot]
CCM-APM 1.053 μm 3.7 ps 7 W 76 MHz lamp-pumped [90Liu2]
1.7 ps 103 MHz [99Jeo]
1.047 μm 1.5 ps 20 mW 123 MHz [90Mal]
4 ps 1 W 120 MHz pump laser for PPLN OPO [99Lef]
CCM-RPM 1.047 μm 3.7 ps 550 mW 250 MHz Ti:sapphire laser pumped [92Kel1]
(continued)
Landolt-Börnstein
New Series VIII/1B1