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PDF (double-sided) - Physics Department, UCSB - University of ...

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the trace along the V-axis, gives clues about the quality <strong>of</strong> the insulating barrier<br />

<strong>of</strong> the junction.<br />

The geometry <strong>of</strong> the junction causes it to also behave like a classical parallel<br />

plate capacitor, which can be understood as simply shunting the junction in parallel<br />

as shown in Figure 2.2c. The junction’s capacitance C J depends only on its<br />

geometrical parameters according to the usual formula:<br />

C J = ε A d<br />

(2.10)<br />

Here, ε is the dielectric constant <strong>of</strong> the insulator, A is the junction’s area, and<br />

d the insulator’s thickness. Since the junction’s capacitance scales linearly with<br />

the barrier thickness while its critical current scales exponentially, it is possible<br />

to control C J and I c independently <strong>of</strong> each other.<br />

2.2.3 Circuit Potential<br />

As the junction’s capacitance behaves exactly like a conventional capacitor, the<br />

most straightforward way to integrate the junction into the standard LC-oscillator<br />

circuit is by putting it in the place <strong>of</strong> the oscillator’s capacitor and designing it such<br />

that C J = C. The resulting circuit can be analyzed in a variety <strong>of</strong> different ways.<br />

The easiest approach is to simply use the Josephson relations and Kirchh<strong>of</strong>f’s<br />

current law. For this, the current I(t) flowing through the oscillator’s inductor<br />

25

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