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PDF (double-sided) - Physics Department, UCSB - University of ...

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Figure 5.3: Photolithography and Etching – a) Exposure: Irradiation with UV<br />

light changes the soluability <strong>of</strong> the photo-resist (PR). A mask is used to block the<br />

UV radiation where desired. Optics reduce the pattern by 5×. b) Development:<br />

Developer selectively removes the photo-resist. c) Completed development: The<br />

mask pattern has been replicated in the photo-resist. d) Etch: A mixture <strong>of</strong><br />

ionized gases removes the metal where it is not protected by the photo-resist.<br />

e) Completed etch. f) Strip: A solvent removes the remaining photo-resist. g)<br />

Completion: The mask pattern has been replicated as traces on the wafer.<br />

photo-resist before it is placed into a machine called a “Stepper”. The Stepper<br />

exposes an array <strong>of</strong> 5× reduced copies <strong>of</strong> the base wiring pattern “printed” on<br />

the mask plate created in L-Edit. For this it shines UV light through a system<br />

<strong>of</strong> lenses and the mask onto the wafer for 1.2 s at a time. When all exposures are<br />

complete, the wafer is dipped into a developer like MF-701, which removes the<br />

more soluable parts <strong>of</strong> the photo-resist. This leaves a positive image <strong>of</strong> the mask<br />

pattern on the wafer as shown in Figures 5.3a-c.<br />

94

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