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CASINO manual - Theory of Condensed Matter

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one band is partly filled, while in non-metallic systems all the bands are fully occupied or empty.<br />

Exceptions arise in some systems in which the band is partially filled but the Coulomb interaction<br />

between the electrons is sufficiently strong that the electrons are localized. An alternative view to band<br />

theory would help to distinguish the character <strong>of</strong> the system. It is argued by Kohn [89] that the system<br />

is insulating as a result <strong>of</strong> wave function localization in the configuration space. The development <strong>of</strong><br />

the Berry-phase theory <strong>of</strong> polarization [90, 91, 92, 93, 94] further advanced Kohn’s idea and provided<br />

tools to measure the localization <strong>of</strong> the electrons and the polarization. This Berry-phase approach<br />

solves the problem that the polarization is ill defined in an extended system by computing the quantity<br />

directly from the many-body wave function instead <strong>of</strong> the electron positions. Souza and Martin [93]<br />

provided the expressions for the localization tensor and the polarization in terms <strong>of</strong> a many-body<br />

Wannier wave function. This wave function is linked to Kohn’s wave function: for an insulating<br />

system it is localized in configuration space in the thermodynamic limit. Souza and Martin [93]<br />

also showed that the localization tensor is related to a frequency integral <strong>of</strong> the conductivity. The<br />

conductivity formula implies that for a system with non-vanishing conductivity the localization tensor<br />

is infinite, otherwise it has a finite value. In [95], the <strong>of</strong>f-diagonal elements <strong>of</strong> the localization tensor<br />

are used to calculate the DC conductivity in the transverse direction for a quantum hall fluid.<br />

The localization tensor and polarization are written in terms <strong>of</strong> a many body operator<br />

〉<br />

Z (α)<br />

N<br />

〈Ψ|e = iGα·X(Rm) |Ψ , (409)<br />

where G α is a simulation cell reciprocal lattice vector and X is the sum <strong>of</strong> electron positions ∑ n<br />

i=1 r i<br />

<strong>of</strong> a configuration R m .<br />

The Berry-phase polarization is given by<br />

P α = N V 〈r α〉 c<br />

, (410)<br />

where 〈r α 〉 c<br />

is the expectation value <strong>of</strong> the electron distribution given by<br />

〈r α 〉 c<br />

= 1<br />

NG α<br />

IlogZ (α)<br />

N , (411)<br />

the equation (410) measures the polarization current <strong>of</strong> the system in response to an adiabatic change<br />

<strong>of</strong> the Hamiltonian by approximating the Coulomb interaction as a first-order perturbation.<br />

The localization tensor can be interpreted as a measure <strong>of</strong> the quadratic spread <strong>of</strong> a charge distribution.<br />

This gives an indication <strong>of</strong> how well the electrons are localized in the simulation cell according to the<br />

wave function. This is written as<br />

where N is the number <strong>of</strong> electrons in the simulation cell.<br />

The <strong>of</strong>f-diagonal elements <strong>of</strong> the localization tensor are defined by<br />

〈<br />

r<br />

2<br />

α<br />

〉c = −1<br />

NG 2 log |Z (α)<br />

N |2 , (412)<br />

α<br />

〈r α r β 〉 c<br />

= −1 log |Z(α) N<br />

||Z(β) N |<br />

NG α G β |Z (αβ)<br />

N | , (413)<br />

where Z (αβ)<br />

N<br />

is defined as 〈 Ψ|e −i(Gα−G β)·X(R m) |Ψ 〉 .<br />

In QMC, the localization tensor and polarization are calculated from Z N with the periodic boundary<br />

conditions imposed. This is done by summing the electron positions <strong>of</strong> each configuration R m to<br />

calculate e −iGα·X(Rm) . This is then averaged over configurations generated by VMC or DMC to give<br />

mean<br />

¯z N = 1 M∑<br />

Z N (R m ) , (414)<br />

M<br />

m=1<br />

to ensure (414) tends to (409) and the statistical error is small, a large number <strong>of</strong> steps must be<br />

taken to sample the configuration. The localization tensor diverges when Z N is zero. Numerically,<br />

Z N would never be zero, but could become small so that the localization tensor becomes very large<br />

when approaching metal-insulator transition from the insulating side [96]. As the difference between<br />

¯z and Z N (R m ) becomes large when approaching the divergence, it is <strong>of</strong>ten useful to examine the error<br />

bar in Z N to determine when the localization tensor diverges.<br />

196

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