Absolute Maximum Ratings Characteristics SKiiP 20 NAB 12 - SKiiP ...
Absolute Maximum Ratings Characteristics SKiiP 20 NAB 12 - SKiiP ...
Absolute Maximum Ratings Characteristics SKiiP 20 NAB 12 - SKiiP ...
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<strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> <strong>12</strong> - <strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> <strong>12</strong> I Mini<strong>SKiiP</strong> 2<br />
<strong>Absolute</strong> <strong>Maximum</strong> <strong>Ratings</strong><br />
Symbol Conditions 1) Values Units<br />
Inverter (Chopper see <strong>SKiiP</strong> 22 <strong>NAB</strong> <strong>12</strong>)<br />
V CES<br />
V GES<br />
I C T heatsink = 25 / 80 °C<br />
I CM t p < 1 ms; T heatsink = 25 / 80 °C<br />
I F = –I C T heatsink = 25 / 80 °C<br />
I FM = –I CM t p < 1 ms; T heatsink = 25 / 80 °C<br />
Bridge Rectifier<br />
V RRM<br />
I D<br />
I FSM<br />
I 2 t<br />
T j<br />
T stg<br />
V isol<br />
T heatsink = 80 °C<br />
t p = 10 ms; sin. 180 °, T j = 25 °C<br />
t p = 10 ms; sin. 180 °, T j = 25 °C<br />
AC, 1 min.<br />
1<strong>20</strong>0<br />
± <strong>20</strong><br />
16 / 11<br />
32 / 22<br />
16 / 11<br />
32 / 22<br />
1500<br />
25<br />
370<br />
680<br />
– 40 . . . + 150<br />
– 40 . . . + <strong>12</strong>5<br />
2500<br />
© by SEMIKRON 000131 B 16 – 49<br />
V<br />
V<br />
A<br />
A<br />
A<br />
A<br />
V<br />
A<br />
A<br />
A 2 s<br />
<strong>Characteristics</strong><br />
Symbol Conditions 1) min. typ. max. Units<br />
10 A T = 25 (<strong>12</strong>5) °C<br />
A T = 25 (<strong>12</strong>5) °C<br />
IGBT - Inverter<br />
V CEsat I C =<br />
R thjh per IGBT<br />
t d(on)<br />
t r<br />
t d(off)<br />
j<br />
V CC = 600 V; V GE = ± 15 V<br />
I C = 10 A; T j = <strong>12</strong>5 °C<br />
R gon = R goff = 150 Ω<br />
t f inductive load<br />
E on + E off<br />
C ies V CE = 25 V; V GE = 0 V, 1 MHz<br />
IGBT - Chopper *<br />
V CEsat I C = 15<br />
R thjh per IGBT<br />
t d(on)<br />
j<br />
V CC = 600 V; V GE = ± 15 V<br />
t r<br />
I C = 15 A; T j = <strong>12</strong>5 °C<br />
t d(off)<br />
R gon = R goff = 82 Ω<br />
t f inductive load<br />
E on + E off<br />
C ies V CE = 25 V; V GE = 0 V, 1 MHz<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
–<br />
2,7(3,3)<br />
55<br />
50<br />
380<br />
80<br />
2,7<br />
0,53<br />
–<br />
2,5(3,1)<br />
55<br />
45<br />
400<br />
70<br />
4,0<br />
1,0<br />
–<br />
Diode 2) - Inverter (Diode 2) - Chopper see <strong>SKiiP</strong> 22 <strong>NAB</strong> <strong>12</strong>)<br />
V F = V EC I F = 10 A T j = 25 (<strong>12</strong>5) °C – 2,0(1,8)<br />
R thjh per diode<br />
– –<br />
V TO<br />
r T<br />
T j = <strong>12</strong>5 °C<br />
T j = <strong>12</strong>5 °C<br />
–<br />
–<br />
1,0<br />
80<br />
I RRM<br />
Q rr<br />
E off<br />
I F = 10 A, V R = – 600 V<br />
di F /dt = – 300 A/µs<br />
V GE = 0 V, T j = <strong>12</strong>5 °C<br />
–<br />
–<br />
–<br />
<strong>12</strong><br />
1,8<br />
0,4<br />
Diode - Rectifier<br />
V F I F = 25 A, T j = 25 °C<br />
– 1,2<br />
R thjh per diode<br />
– –<br />
3,2(3,9)<br />
110<br />
100<br />
570<br />
1<strong>20</strong><br />
–<br />
–<br />
1,8<br />
3,0(3,7)<br />
110<br />
90<br />
600<br />
100<br />
–<br />
–<br />
1,4<br />
2,5(2,3)<br />
1,2<br />
110<br />
–<br />
–<br />
–<br />
2,4<br />
–<br />
2,6<br />
°C<br />
°C<br />
V<br />
V<br />
ns<br />
ns<br />
ns<br />
ns<br />
mJ<br />
nF<br />
K/W<br />
V<br />
ns<br />
ns<br />
ns<br />
ns<br />
mJ<br />
nF<br />
K/W<br />
V<br />
V<br />
mΩ<br />
A<br />
µC<br />
mJ<br />
K/W<br />
V<br />
K/W<br />
Temperature Sensor<br />
R TS T = 25 / 100 °C 1000 / 1670 Ω<br />
Mechanical Data<br />
M 1<br />
Case<br />
case to heatsink, SI Units<br />
mechanical outline see page<br />
B 16 – 8<br />
2 –<br />
M2<br />
* For diagrams of the Chopper IGBT please refer to <strong>SKiiP</strong> 22 <strong>NAB</strong> <strong>12</strong><br />
2,5 Nm<br />
SEMIKRON integrated<br />
intelligent Power<br />
<strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> <strong>12</strong><br />
<strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> <strong>12</strong> I 3)<br />
3-phase bridge rectifier +<br />
braking chopper +<br />
3-phase bridge inverter<br />
Case M2<br />
UL recognized file no. E63532<br />
• specification of shunts and<br />
temperature sensor see part A<br />
• common characteristics see<br />
page B 16 – 4<br />
1) T heatsink = 25 °C, unless<br />
otherwise specified<br />
2) CAL = Controlled Axial Lifetime<br />
Technology (soft and fast<br />
recovery)<br />
3) With integrated DC and/or AC<br />
shunts<br />
4)<br />
accuracy of pure shunt, please<br />
note that for DC shunt no<br />
separate sensing contact is<br />
used.<br />
R cs(dc) 5 % 4)<br />
R cs(ac) 1 %<br />
16,5 mΩ<br />
10 mΩ
Fig. 1 Typ. output characteristic, t p = 80 µs; 25 °C Fig. 2 Typ. output characteristic, t p = 80 µs; <strong>12</strong>5 °C<br />
T j = <strong>12</strong>5 °C<br />
V CE = 600 V<br />
V GE = ± 15 V<br />
R G = 150 Ω<br />
T j = <strong>12</strong>5 °C<br />
V CE = 600 V<br />
V GE = ± 15 V<br />
I C = 10 A<br />
Fig. 3 Turn-on /-off energy = f (I C ) Fig. 4 Turn-on /-off energy = f (R G )<br />
I Cpuls = 10 A<br />
V GE = 0 V<br />
f = 1 MHz<br />
Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE<br />
B 16 – 50 000131 © by SEMIKRON
Mini<strong>SKiiP</strong> 1<strong>20</strong>0 V<br />
ICop /IC<br />
1.2<br />
1.0<br />
Mini1<strong>20</strong>7<br />
T j = 150 °C<br />
V GE = ≥ 15 V<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
0<br />
0 25 50 75 100 <strong>12</strong>5 150<br />
Th [°C]<br />
Fig. 7 Rated current of the IGBT I Cop / I C = f (T h )<br />
ICpuls/IC<br />
2,5<br />
2<br />
Mini1<strong>20</strong>9<br />
T j = ≤ 150 °C<br />
V GE = ± 15 V<br />
ICsc/ICN<br />
<strong>12</strong><br />
10<br />
Mini<strong>12</strong>10<br />
T j = ≤ 150 °C<br />
V GE = ± 15 V<br />
t sc = ≤ 10 µs<br />
L ext < 25 nH<br />
1,5<br />
1<br />
8<br />
6<br />
4<br />
Note:<br />
*Allowed numbers of<br />
short circuit:1s<br />
0,5<br />
2<br />
0<br />
0<br />
0 500 1000 1500<br />
0 500 1000 1500<br />
VCE [V]<br />
VCE [V]<br />
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT<br />
Fig. 11 Typ. freewheeling diode forward characteristic<br />
Fig. <strong>12</strong> Forward characteristic of the input bridge diode<br />
B 16 – 4 0698 © by SEMIKRON
Mini<strong>SKiiP</strong> 2<br />
+rect<br />
+B<br />
+DC<br />
I+<br />
<strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> 06 ...<br />
<strong>SKiiP</strong> 21 <strong>NAB</strong> 06 ...<br />
<strong>SKiiP</strong> <strong>20</strong> <strong>NAB</strong> <strong>12</strong> ...<br />
<strong>SKiiP</strong> 22 <strong>NAB</strong> <strong>12</strong> ...<br />
Circuit<br />
Case M2<br />
Layout and connections for the<br />
customer’s printed circuit board<br />
Note: The shunts are available<br />
only by option I<br />
L1<br />
L2<br />
L3<br />
g1<br />
B +T -T<br />
gB<br />
g2<br />
-rect -B -DC<br />
g3<br />
g4<br />
Isu<br />
0u<br />
-DC/A<br />
g5<br />
g6<br />
Isv<br />
0v<br />
Isw<br />
0w<br />
U<br />
V<br />
W<br />
Hauptanschluß<br />
power connector<br />
Steueranschluß<br />
control pin
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