3D-MEMS Probe for Fine Pitch Probing - Semiconductor Wafer Test ...
3D-MEMS Probe for Fine Pitch Probing - Semiconductor Wafer Test ...
3D-MEMS Probe for Fine Pitch Probing - Semiconductor Wafer Test ...
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<strong>3D</strong>-<strong>MEMS</strong> <strong>Probe</strong> <strong>for</strong><br />
<strong>Fine</strong> <strong>Pitch</strong> <strong>Probing</strong><br />
Ryuichiro Mori<br />
R&D<br />
Japan Electronic Materials Corp.<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 1
Presentation Overview<br />
1. Introduction<br />
• JEM product overview<br />
2. Objectives<br />
• Challenges in fine pitch probing<br />
• Development of <strong>3D</strong>-<strong>MEMS</strong> probe<br />
3. Evaluation<br />
• Individual fine pitch cantilever<br />
• Actual probe layout<br />
4. Conclusions<br />
5. Next steps<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 2
1. Introduction<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 3
JEM Product Overview<br />
MPU-Logic<br />
MB series<br />
<strong>Fine</strong> pitch Logic<br />
(SoC/LCD-driver)<br />
VS series<br />
MA series<br />
Memory<br />
CEN series<br />
Cantilever<br />
(CE series)<br />
VC series<br />
MC series<br />
Cantilever<br />
Vertical<br />
<strong>MEMS</strong><br />
Innovation of Device- & <strong>Test</strong>- technology<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 4
Application of <strong>3D</strong>-<strong>MEMS</strong> probe (MA)<br />
Straight 24μm pitch<br />
Staggered 20μm pitch<br />
500μm<br />
LCD-driver<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 5
2. Objectives<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 6
Challenges in <strong>Fine</strong> <strong>Pitch</strong> <strong>Probing</strong><br />
• LCD-driver<br />
– Pad pitch shrink<br />
•20μm staggered, 24μm inline<br />
– Stable contact with low <strong>for</strong>ce<br />
– Avoid gold bump damage<br />
– Multi dut probing<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 7
Challenges in <strong>Fine</strong> <strong>Pitch</strong> <strong>Probing</strong><br />
•SoC<br />
– Pad pitch shrink<br />
• 30μm pitch<br />
– Stable contact with low <strong>for</strong>ce<br />
– Avoid pad damage<br />
•Low-k<br />
• CUP (Circuit Under Pad)<br />
– Multi dut <strong>Probing</strong><br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 8
Development of <strong>3D</strong>-<strong>MEMS</strong> <strong>Probe</strong><br />
• Develop fine pitch cantilever<br />
with mechanical endurance<br />
• Achieve lower contact <strong>for</strong>ce<br />
with good contact resistance<br />
• Achieve precise xyz alignment<br />
in actual probe layout<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 9
3. Evaluation<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 10
<strong>3D</strong>-<strong>MEMS</strong> <strong>Probe</strong> Process<br />
Sacrificial layer<br />
on substrate<br />
Sacrificial layer<br />
Substrate<br />
<strong>Probe</strong><br />
on sacrificial layer<br />
Remove<br />
sacrificial layer<br />
Contact tip<br />
<strong>Probe</strong><br />
Substrate<br />
Substrate<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 11
SEM Image of <strong>Fine</strong> <strong>Pitch</strong><br />
Cantilever<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 12
Evaluation Items<br />
•Individual fine pitch cantilever<br />
•Contact <strong>for</strong>ce/Scrub mark/OT<br />
•Contact resistance<br />
•Contact tip wear<br />
•Actual probe layout<br />
•XY alignment<br />
•Planarity<br />
•Actual device<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 13
Contact Force / Scrub Mark / OT<br />
0.7<br />
7<br />
Contact <strong>for</strong>ce(gf)<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
0<br />
0<br />
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0<br />
Over travel(um)<br />
Max. Contact Force<br />
Min. Contact Force<br />
Scrub mark<br />
6<br />
5<br />
4<br />
3<br />
2<br />
1<br />
Scrub mark(um)<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 14
Cres (Ω)<br />
Contact Resistance(Au Plated<br />
1.00<br />
0.90<br />
0.80<br />
0.70<br />
0.60<br />
0.50<br />
0.40<br />
0.30<br />
0.20<br />
0.10<br />
0.00<br />
<strong>Wafer</strong>)<br />
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80<br />
<strong>Probe</strong> Force(g) <strong>for</strong>ce Tip material<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 15<br />
A<br />
B<br />
C<br />
D<br />
E<br />
F
Contact Tip Wear<br />
Contact tip abrasion(um)<br />
wear(um)<br />
3<br />
2<br />
1<br />
0<br />
0 300 500 700 1000<br />
Touch Down down (thousands)<br />
Contact Tip<br />
Wear<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 16
Image of Contact Tip Wear<br />
TD : 0 TD : 300,000 TD : 500,000<br />
TD : 700,000<br />
TD:1,000,000<br />
No significant change<br />
was observed after<br />
1M touchdowns<br />
(no cleaning)<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 17
Actual <strong>Probe</strong> Layout<br />
18mm<br />
25μm pitch<br />
staggered<br />
Total 900probes<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 18
SEM Image of <strong>Probe</strong>s<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 19
XY Alignment (Initial)<br />
10<br />
8<br />
6<br />
4<br />
Target<br />
2<br />
⊿Y [μm ]<br />
0<br />
-10 -8 -6 -4 -2 -2<br />
0 2 4 6 8 10<br />
-4<br />
-6<br />
-8<br />
-10<br />
⊿X [μm ]<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 20
XY Alignment (after 1M TD)<br />
10<br />
8<br />
6<br />
4<br />
2<br />
Target<br />
⊿Y [μm ]<br />
0<br />
-10 -8 -6 -4 -2 -2<br />
0 2 4 6 8 10<br />
-4<br />
-6<br />
-8<br />
-10<br />
⊿X [μm ]<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 21
Planarity (Initial)<br />
20<br />
15<br />
Planarity [μm ]<br />
10<br />
5<br />
0<br />
-10 -5 -5<br />
0 5<br />
Target<br />
10<br />
-10<br />
-15<br />
-20<br />
<strong>Probe</strong> X position [mm]<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 22
Planarity (After 1M TD)<br />
20<br />
15<br />
Planarity [μm ]<br />
10<br />
5<br />
Target<br />
0<br />
-10 -5 -5<br />
0 5 10<br />
-10<br />
-15<br />
-20<br />
<strong>Probe</strong> X position [mm]<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 23
Evaluation on Actual Device<br />
•<strong>Probe</strong>r setup was done very well.<br />
•Alignment<br />
•Tip recognition<br />
•Planarity<br />
•Contact<br />
•Electrical function test was<br />
completed.<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 24
4. Conclusions<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 25
Conclusions<br />
1. <strong>Fine</strong> pitch cantilever (MA) has been<br />
developed by using the <strong>3D</strong>-<strong>MEMS</strong><br />
probe technology.<br />
2. Excellent contact with low <strong>for</strong>ce (0.2gf)<br />
against Au plated wafer.<br />
3. Mechanical stability over 1M<br />
touchdowns has been achieved.<br />
4. Evaluation on the actual device has<br />
been demonstrated.<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 26
5. Next Steps<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 27
Next Steps<br />
1. Proceed the MA card into a volume<br />
production<br />
2. Apply <strong>for</strong> SoC devices<br />
Optimize probe design, probe <strong>for</strong>ce,<br />
probe material, probe layout<br />
3. Improve the assembly technology <strong>for</strong><br />
multi-DUT probing<br />
4. Next target <strong>for</strong> LCD-driver<br />
15μm staggered, 20μm inline<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 28
Thank You.<br />
June 3-6, 3<br />
2007 IEEE SW <strong>Test</strong> Workshop 29
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