NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
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NXP Semiconductors<br />
<strong>NX<strong>30</strong>08PBK</strong><br />
<strong>30</strong> V, 2<strong>30</strong> <strong>mA</strong> P-<strong>channel</strong> <strong>Trench</strong> <strong>MOSFET</strong><br />
-5<br />
001aao264<br />
V GS<br />
(V)<br />
-4<br />
V DS<br />
I D<br />
Q GS<br />
-3<br />
V GS(pl)<br />
-2<br />
-1<br />
V GS(th)<br />
V GS<br />
Q GS1 Q GS2<br />
Q GD<br />
Q G(tot)<br />
0<br />
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7<br />
003aaa508<br />
Q G (nC)<br />
I D = -200 <strong>mA</strong>; V DS = -15 V; T amb = 25 °C<br />
Fig 14. Gate-source voltage as a function of gate<br />
charge; typical values<br />
Fig 15. Gate charge waveform definitions<br />
-0.25<br />
001aao265<br />
I S<br />
(A)<br />
-0.20<br />
-0.15<br />
(1) (2)<br />
-0.10<br />
-0.05<br />
0.00<br />
0.0 -0.4<br />
-0.8<br />
-1.2<br />
V SD (V)<br />
V GS = 0 V<br />
(1) T j = 150 °C<br />
(2) T j = 25 °C<br />
Fig 16. Source current as a function of source-drain voltage; typical values<br />
<strong>NX<strong>30</strong>08PBK</strong> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.<br />
Product data sheet Rev. 1 — 1 August 2011 9 of 16
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