NX3008PBK 30 V, 230 mA P-channel Trench MOSFET

NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
-0.25
001aao260
2.0
001aao261
I D
(A)
a
-0.20
1.5
-0.15
(1)
(2)
1.0
-0.10
-0.05
0.5
0.00
0 -1
-2
-3
V GS (V)
V DS > I D x R DSon
(1) T j = 25 °C
(2) T j = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60 0 60 120 180
T j (˚C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
-1.5
001aao262
10 2
001aao263
V GS(th)
(V)
-1.0
(1)
C
(pF)
(1)
(2)
10
(2)
-0.5
(3)
(3)
0.0
-60 0 60 120 180
T j (˚C)
I D = -0.25 mA; V DS = V GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
-10 -1 -1
-10
-10 2
V DS (V)
f = 1 MHz; V GS = 0 V
(1)C iss
(2)C oss
(3)C rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX3008PBK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 8 of 16