NX3008PBK 30 V, 230 mA P-channel Trench MOSFET

NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
Fig 6.
-0.25
I D
(A)
-0.20
-0.15
-0.10
-0.05
-4.5 V -3 V
0.00
0 -1 -2 -3 -4
V DS (V)
T j = 25 °C
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-2.5 V
-2 V
V GS = -1.5 V
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
-10 -3
I D
(A)
(1) (2) (3)
-10 -4
-10 -5
T j = 25 °C; V DS = -5 V
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0.0 -0.5
-1.0
-1.5
V GS (V)
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
gate-source voltage
14
R DS (on)
(Ω)
12
(1) (2) (3)
(4)
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14
R DS (on)
(Ω)
12
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10
10
8
8
6
(5)
6
(1)
4
(6)
4
(2)
2
2
0
0 -0.05 -0.10 -0.15 -0.20 -0.25
I D (A)
0
0 -1 -2 -3 -4 -5
V GS (A)
T j = 25 °C
(1) V GS = -1.75 V
(2) V GS = -2.0 V
(3) V GS = -2.25 V
(4) V GS = -2.5 V
(5) V GS = -3.0 V
(6) V GS = -4.5 V
I D = -200 mA
(1) T j = 150 °C
(2) T j = 25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3008PBK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 7 of 16