NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
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NXP Semiconductors<br />
<strong>NX<strong>30</strong>08PBK</strong><br />
<strong>30</strong> V, 2<strong>30</strong> <strong>mA</strong> P-<strong>channel</strong> <strong>Trench</strong> <strong>MOSFET</strong><br />
7. Characteristics<br />
Table 7.<br />
Characteristics<br />
Symbol Parameter Conditions Min Typ Max Unit<br />
Static characteristics<br />
V (BR)DSS drain-source<br />
I D =-250µA; V GS =0V; T j = 25 °C -<strong>30</strong> - - V<br />
breakdown voltage<br />
V GSth gate-source threshold I D =-250µA; V DS =V GS ; T j = 25 °C -0.6 -0.9 -1.1 V<br />
voltage<br />
I DSS drain leakage current V DS =-<strong>30</strong>V; V GS =0V; T j = 150 °C - - -10 µA<br />
V DS =-<strong>30</strong>V; V GS =0V; T j = 25 °C - - -1 µA<br />
I GSS gate leakage current V GS =8V; V DS =0V; T j = 25 °C - -0.2 -1 µA<br />
V GS =-8V; V DS =0V; T j = 25 °C - -0.2 -1 µA<br />
V GS =4.5V; V DS =0V; T j =25°C - -10 - nA<br />
V GS =-4.5V; V DS =0V; T j =25°C - -10 - nA<br />
V GS =2.5V; V DS =0V; T j =25°C - -1 - nA<br />
V GS =-2.5V; V DS =0V; T j =25°C - -1 - nA<br />
R DSon drain-source on-state V GS =-4.5V; I D = -200 <strong>mA</strong>; T j =25°C - 2.8 4.1 Ω<br />
resistance<br />
V GS =-4.5V; I D = -200 <strong>mA</strong>; T j = 150 °C - 5.3 7.8 Ω<br />
V GS =-2.5V; I D =-10<strong>mA</strong>; T j =25°C - 5.3 6.5 Ω<br />
g fs forward<br />
V DS =-10V; I D = -200 <strong>mA</strong>; T j = 25 °C - 160 - mS<br />
transconductance<br />
Dynamic characteristics<br />
Q G(tot) total gate charge V DS =-15V; I D = -200 <strong>mA</strong>;<br />
- 0.55 0.72 nC<br />
Q GS gate-source charge<br />
V GS =-4.5V; T j =25°C<br />
- 0.23 - nC<br />
Q GD gate-drain charge - 0.09 - nC<br />
C iss input capacitance V DS = -15 V; f = 1 MHz; V GS =0V;<br />
- 31 46 pF<br />
C oss output capacitance<br />
T j =25°C<br />
- 6.5 - pF<br />
C rss<br />
reverse transfer<br />
- 2.3 - pF<br />
capacitance<br />
t d(on) turn-on delay time V DS =-20V; R L = 250 Ω; V GS =-4.5V; - 19 38 ns<br />
t r rise time<br />
R G(ext) =6Ω; T j =25°C<br />
- <strong>30</strong> - ns<br />
t d(off) turn-off delay time - 65 1<strong>30</strong> ns<br />
t f fall time - 38 - ns<br />
Source-drain diode<br />
V SD source-drain voltage I S = -200 <strong>mA</strong>; V GS =0V; T j = 25 °C -0.47 -0.88 -1.2 V<br />
<strong>NX<strong>30</strong>08PBK</strong> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.<br />
Product data sheet Rev. 1 — 1 August 2011 6 of 16