NX3008PBK 30 V, 230 mA P-channel Trench MOSFET

NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V (BR)DSS drain-source
I D =-250µA; V GS =0V; T j = 25 °C -30 - - V
breakdown voltage
V GSth gate-source threshold I D =-250µA; V DS =V GS ; T j = 25 °C -0.6 -0.9 -1.1 V
voltage
I DSS drain leakage current V DS =-30V; V GS =0V; T j = 150 °C - - -10 µA
V DS =-30V; V GS =0V; T j = 25 °C - - -1 µA
I GSS gate leakage current V GS =8V; V DS =0V; T j = 25 °C - -0.2 -1 µA
V GS =-8V; V DS =0V; T j = 25 °C - -0.2 -1 µA
V GS =4.5V; V DS =0V; T j =25°C - -10 - nA
V GS =-4.5V; V DS =0V; T j =25°C - -10 - nA
V GS =2.5V; V DS =0V; T j =25°C - -1 - nA
V GS =-2.5V; V DS =0V; T j =25°C - -1 - nA
R DSon drain-source on-state V GS =-4.5V; I D = -200 mA; T j =25°C - 2.8 4.1 Ω
resistance
V GS =-4.5V; I D = -200 mA; T j = 150 °C - 5.3 7.8 Ω
V GS =-2.5V; I D =-10mA; T j =25°C - 5.3 6.5 Ω
g fs forward
V DS =-10V; I D = -200 mA; T j = 25 °C - 160 - mS
transconductance
Dynamic characteristics
Q G(tot) total gate charge V DS =-15V; I D = -200 mA;
- 0.55 0.72 nC
Q GS gate-source charge
V GS =-4.5V; T j =25°C
- 0.23 - nC
Q GD gate-drain charge - 0.09 - nC
C iss input capacitance V DS = -15 V; f = 1 MHz; V GS =0V;
- 31 46 pF
C oss output capacitance
T j =25°C
- 6.5 - pF
C rss
reverse transfer
- 2.3 - pF
capacitance
t d(on) turn-on delay time V DS =-20V; R L = 250 Ω; V GS =-4.5V; - 19 38 ns
t r rise time
R G(ext) =6Ω; T j =25°C
- 30 - ns
t d(off) turn-off delay time - 65 130 ns
t f fall time - 38 - ns
Source-drain diode
V SD source-drain voltage I S = -200 mA; V GS =0V; T j = 25 °C -0.47 -0.88 -1.2 V
NX3008PBK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 6 of 16