NX3008PBK 30 V, 230 mA P-channel Trench MOSFET

NXP Semiconductors
NX3008PBK
30 V, 230 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R th(j-a) thermal resistance from junction to ambient in free air
[1]
- 310 370 K/W
[2]
- 260 300 K/W
R th(j-sp)
thermal resistance from junction to solder
point
- - 115 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 .
10 3
017aaa015
Z th(j-a)
(K/W)
10 2
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0
0.02
0.01
Fig 4.
1
10 −3 10 −2 10 −1
1
10
10 2 10 3
t p (s)
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10 3
017aaa016
Z th(j-a)
(K/W)
10 2
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1 0.05
10
0
0.02
0.01
Fig 5.
1
10 −3 10 −2 10 −1
1
10
10 2 10 3
t p (s)
FR4 PCB, mounting pad for drain 1 cm 2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX3008PBK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 5 of 16