NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
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NXP Semiconductors<br />
<strong>NX<strong>30</strong>08PBK</strong><br />
<strong>30</strong> V, 2<strong>30</strong> <strong>mA</strong> P-<strong>channel</strong> <strong>Trench</strong> <strong>MOSFET</strong><br />
6. Thermal characteristics<br />
Table 6. Thermal characteristics<br />
Symbol Parameter Conditions Min Typ Max Unit<br />
R th(j-a) thermal resistance from junction to ambient in free air<br />
[1]<br />
- 310 370 K/W<br />
[2]<br />
- 260 <strong>30</strong>0 K/W<br />
R th(j-sp)<br />
thermal resistance from junction to solder<br />
point<br />
- - 115 K/W<br />
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.<br />
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 .<br />
10 3<br />
017aaa015<br />
Z th(j-a)<br />
(K/W)<br />
10 2<br />
duty cycle = 1<br />
0.75<br />
0.5<br />
0.33<br />
0.25<br />
0.2<br />
0.1<br />
0.05<br />
10<br />
0<br />
0.02<br />
0.01<br />
Fig 4.<br />
1<br />
10 −3 10 −2 10 −1<br />
1<br />
10<br />
10 2 10 3<br />
t p (s)<br />
FR4 PCB, standard footprint<br />
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values<br />
10 3<br />
017aaa016<br />
Z th(j-a)<br />
(K/W)<br />
10 2<br />
duty cycle = 1<br />
0.75<br />
0.5<br />
0.33<br />
0.25<br />
0.2<br />
0.1 0.05<br />
10<br />
0<br />
0.02<br />
0.01<br />
Fig 5.<br />
1<br />
10 −3 10 −2 10 −1<br />
1<br />
10<br />
10 2 10 3<br />
t p (s)<br />
FR4 PCB, mounting pad for drain 1 cm 2<br />
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values<br />
<strong>NX<strong>30</strong>08PBK</strong> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.<br />
Product data sheet Rev. 1 — 1 August 2011 5 of 16