NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
NX3008PBK 30 V, 230 mA P-channel Trench MOSFET
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NXP Semiconductors<br />
<strong>NX<strong>30</strong>08PBK</strong><br />
<strong>30</strong> V, 2<strong>30</strong> <strong>mA</strong> P-<strong>channel</strong> <strong>Trench</strong> <strong>MOSFET</strong><br />
120<br />
001aao121<br />
120<br />
001aao122<br />
P der<br />
(%)<br />
I der<br />
(%)<br />
80<br />
80<br />
40<br />
40<br />
0<br />
-75 -25 25 75 125 175<br />
T j (°C)<br />
0<br />
-75 -25 25 75 125 175<br />
T j (°C)<br />
Fig 1.<br />
Normalized total power dissipation as a<br />
function of junction temperature<br />
Fig 2.<br />
Normalized continuous drain current as a<br />
function of junction temperature<br />
-10<br />
001aao255<br />
l D<br />
(A)<br />
-1<br />
Fig 3.<br />
I DM is a single pulse<br />
(1) t p = 1 ms<br />
(2) t p = 10 ms<br />
(3) t p = 100 ms<br />
(4) DC; T sp = 25 °C<br />
-10 -2 (5)<br />
(1)<br />
-10 -1<br />
(2)<br />
(3)<br />
(4)<br />
-10 -1 -1<br />
-10<br />
-10 2<br />
V DS (V)<br />
(5) DC; T amb = 25 °C; 1 cm 2 drain mounting pad<br />
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source<br />
voltage<br />
<strong>NX<strong>30</strong>08PBK</strong> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.<br />
Product data sheet Rev. 1 — 1 August 2011 4 of 16
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