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1.8V Low Power Open-Drain Output Comparator - Microchip

1.8V Low Power Open-Drain Output Comparator - Microchip

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MCP6566/6R/6U/7/9<br />

DC CHARACTERISTICS (CONTINUED)<br />

Electrical Characteristics: Unless otherwise indicated: V DD = +<strong>1.8V</strong> to +5.5V, V SS = GND, T A = +25°C, V IN + = V DD /2, V IN - = V SS ,<br />

and R Pull-Up = 20 kΩ to V PU = V DD (see Figure 1-1).<br />

Parameters Symbol Min Typ Max Units Conditions<br />

Push-Pull <strong>Output</strong><br />

Pull-up Voltage V PULL_UP 1.6 — 5.5 V<br />

High Level <strong>Output</strong> Voltage V OH — — V PULL_UP V (see Figure 1-1) (Notes 3, 4)<br />

High Level <strong>Output</strong> Current leakage I OH_leak — — 1 µA Note 4<br />

<strong>Low</strong> Level <strong>Output</strong> Voltage V OL — — 0.6 V I OUT = 3mA/8mA @ V DD = <strong>1.8V</strong>/5.5V<br />

Short Circuit Current (Notes 3) I SC — ±30 — mA Not to exceed Absolute Max. Rating<br />

<strong>Output</strong> Pin Capacitance C OUT — 8 — pF<br />

Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the<br />

input-referred trip points.<br />

2: V HYST at different temperatures is estimated using V HYST (T A ) = V HYST @ +25°C + (T A - 25°C) TC 1 + (T A - 25°C) 2 TC 2 .<br />

3: Limit the output current to Absolute Maximum Rating of 50 mA.<br />

4: The pull up voltage for the open drain output V PULL_UP can be as high as the absolute maximum rating of 10.5V. In this<br />

case, I OH_leak can be higher than 1 µA (see Figure 2-30).<br />

AC CHARACTERISTICS<br />

Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: V DD = +<strong>1.8V</strong> to +5.5V, V SS = GND,<br />

T A = +25°C, V IN+ = V DD /2, V IN- = V SS , R Pull-Up = 20 kΩ to V PU = V DD , and C L = 25 pf (see Figure 1-1).<br />

Parameters<br />

Symbo<br />

l<br />

Min Typ Max Units Conditions<br />

Propagation Delay<br />

High-to-<strong>Low</strong>,100 mV Overdrive t PHL — 56 80 ns V CM = V DD /2, V DD = <strong>1.8V</strong><br />

— 34 80 ns V CM = V DD /2, V DD = 5.5V<br />

<strong>Output</strong><br />

Fall Time t F — 20 — ns<br />

Maximum Toggle Frequency f TG — 4 — MHz V DD = 5.5V<br />

— 2 — MHz V DD = <strong>1.8V</strong><br />

Input Voltage Noise E NI — 350 — µV P-P 10 Hz to 10 MHz (Note 1)<br />

Note 1: ENI is based on SPICE simulation.<br />

2: Rise time t R and t PLH depend on the load (R L and C L ). These specification are valid for the specified load only.<br />

TEMPERATURE SPECIFICATIONS<br />

Electrical Characteristics: Unless otherwise indicated: V DD = +<strong>1.8V</strong> to +5.5V and V SS = GND.<br />

Parameters<br />

Symbo<br />

l<br />

Min Typ Max Units Conditions<br />

Temperature Ranges<br />

Specified Temperature Range T A -40 — +125 °C<br />

Operating Temperature Range T A -40 — +125 °C<br />

Storage Temperature Range T A -65 — +150 °C<br />

Thermal Package Resistances<br />

Thermal Resistance, SC70-5 θ JA — 331 — °C/W<br />

Thermal Resistance, SOT-23-5 θ JA — 220.7 — °C/W<br />

Thermal Resistance, 8L-MSOP θ JA — 211 — °C/W<br />

Thermal Resistance, 8L-SOIC θ JA — 149.5 — °C/W<br />

Thermal Resistance, 14L-SOIC θ JA — 95.3 — °C/W<br />

Thermal Resistance, 14L-TSSOP θ JA — 100 — °C/W<br />

DS22143B-page 4<br />

© 2009 <strong>Microchip</strong> Technology Inc.

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