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xmega a3u - Elfa

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XMEGA A3U<br />

36.13 Flash and EEPROM Memory Characteristics<br />

Table 36-20. Endurance and data retention.<br />

Symbol Parameter Condition Min. Typ. Max. Units<br />

Flash<br />

Write/Erase cycles<br />

25°C 10K<br />

85°C 10K<br />

Cycle<br />

Data retention<br />

25°C 100<br />

55°C 25<br />

Year<br />

EEPROM<br />

Write/Erase cycles<br />

25°C 80K<br />

85°C 30K<br />

Cycle<br />

Data retention<br />

25°C 100<br />

55°C 25<br />

Year<br />

Table 36-21. Programming time.<br />

Symbol Parameter Condition Min. Typ. (1) Max. Units<br />

256KB Flash, EEPROM (2) and SRAM Erase 105<br />

Chip Erase<br />

192KB Flash, EEPROM (2) and SRAM Erase 90<br />

128KB Flash, EEPROM (2) and SRAM Erase 75<br />

64KB Flash, EEPROM (2) and SRAM Erase 55<br />

Page Erase 4<br />

Flash<br />

Page Write 4<br />

ms<br />

Atomic Page Erase and Write 8<br />

Page Erase 4<br />

EEPROM<br />

Page Write 4<br />

Atomic Page Erase and Write 8<br />

Notes: 1. Programming is timed from the 2MHz internal oscillator.<br />

2. EEPROM is not erased if the EESAVE fuse is programmed.<br />

36.14 Clock and Oscillator Characteristics<br />

36.14.1 Calibrated 32.768kHz Internal Oscillator characteristics<br />

Table 36-22. 32.768kHz internal oscillator characteristics.<br />

Symbol Parameter Condition Min. Typ. Max. Units<br />

Frequency 32.768 kHz<br />

Factory calibration accuracy T = 85°C, V CC = 3.0V -0.5 0.5<br />

User calibration accuracy -0.5 0.5<br />

%<br />

8386B–AVR–12/11<br />

81

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