PN918/MMBT918 NPN RF Transistor - Kitsrus

Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V CEO(sus) Collector-Emitter Sustaining Voltage* I C = 3.0 mA, I B = 0 15 V
V (BR)CBO Collector-Base Breakdown Voltage I C = 1.0 µA, I E = 0 30 V
V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 3.0 V
I CBO Collector Cutoff Current V CB = 15 V, I E = 0
V CB = 15 V, T A = 150°C
NPN RF Transistor
(continued)
0.01
1.0
µA
µA
PN918 / MMBT918
ON CHARACTERISTICS
h FE DC Current Gain I C = 3.0 mA, V CE = 1.0 V 20
V CE(sat) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.4 V
V BE(sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 1.0 V
SMALL SIGNAL CHARACTERISTICS
f T Current Gain - Bandwidth Product I C = 4.0 mA, V CE = 10 V,
600 MHz
f = 100 MHz
C obo Output Capacitance V CB = 10 V, I E = 0, f = 1.0 MHz
V CB = 0, I E = 0, f = 1.0 MHz
1.7
3.0
pF
pF
C ibo Input Capacitance V BE = 0.5 V, I C = 0, f = 1.0 MHz 2.0 pF
NF Noise Figure I C = 1.0 mA, V CE = 6.0 V,
R G = 400Ω, f = 60 MHz
6.0 dB
FUNCTIONAL TEST
G pe Amplifier Power Gain V CB = 12 V, I C = 6.0 mA,
f = 200 MHz
P O Power Output V CB = 15 V, I C = 8.0 mA,
f = 500 MHz
η Collector Efficiency V CB = 15 V, I C = 8.0 mA,
f = 500 MHz
15 dB
30 mW
25 %
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%