PN918/MMBT918 NPN RF Transistor - Kitsrus

PN918
Discrete POWER & Signal
Technologies
MMBT918
PN918 / MMBT918
C
C B E
TO-92
SOT-23
Mark: 3B
B
E
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V CEO Collector-Emitter Voltage 15 V
V CBO Collector-Base Voltage 30 V
V EBO Emitter-Base Voltage 3.0 V
I C Collector Current - Continuous 50 mA
T J , T stg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
PN918 *MMBT918
P D
Total Device Dissipation
Derate above 25°C
350
2.8
225
1.8
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©1997 Fairchild Semiconductor Corporation

Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V CEO(sus) Collector-Emitter Sustaining Voltage* I C = 3.0 mA, I B = 0 15 V
V (BR)CBO Collector-Base Breakdown Voltage I C = 1.0 µA, I E = 0 30 V
V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 µA, I C = 0 3.0 V
I CBO Collector Cutoff Current V CB = 15 V, I E = 0
V CB = 15 V, T A = 150°C
NPN RF Transistor
(continued)
0.01
1.0
µA
µA
PN918 / MMBT918
ON CHARACTERISTICS
h FE DC Current Gain I C = 3.0 mA, V CE = 1.0 V 20
V CE(sat) Collector-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 0.4 V
V BE(sat) Base-Emitter Saturation Voltage I C = 10 mA, I B = 1.0 mA 1.0 V
SMALL SIGNAL CHARACTERISTICS
f T Current Gain - Bandwidth Product I C = 4.0 mA, V CE = 10 V,
600 MHz
f = 100 MHz
C obo Output Capacitance V CB = 10 V, I E = 0, f = 1.0 MHz
V CB = 0, I E = 0, f = 1.0 MHz
1.7
3.0
pF
pF
C ibo Input Capacitance V BE = 0.5 V, I C = 0, f = 1.0 MHz 2.0 pF
NF Noise Figure I C = 1.0 mA, V CE = 6.0 V,
R G = 400Ω, f = 60 MHz
6.0 dB
FUNCTIONAL TEST
G pe Amplifier Power Gain V CB = 12 V, I C = 6.0 mA,
f = 200 MHz
P O Power Output V CB = 15 V, I C = 8.0 mA,
f = 500 MHz
η Collector Efficiency V CB = 15 V, I C = 8.0 mA,
f = 500 MHz
15 dB
30 mW
25 %
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

DC Typical Characteristics
h - TYPICAL PULSED CURRENT GAIN
FE
Typical Pulsed Current Gain
vs Collector Current
100
90
Vce = 5V
80
125 °C
70
60
25 °C
50
40
- 40 °C
30
20
0.1 0.2 0.5 1 2 5 10 20 50
I C - COLLECTOR CURRENT (mA)
P43
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
0.3
0.25
0.2
0.15
0.1
0.05
Collector-Emitter Saturation
Voltage vs Collector Current
β = 10
25 °C
NPN RF Transistor
(continued)
125 °C
- 40 °C
0.1 1 10 30
I C - COLLECTOR CURRENT (mA)
P43
PN918 / MMBT918
V - BASE-EMITTER VOLTAGE (V)
BESAT
1
0.8
0.6
0.4
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
- 40 °C
25 °C
0.1 1 10 30
I - COLLECTOR CURRENT (mA)
C
125 °C
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
1
0.9
0.8
0.7
0.6
0.5
0.4
Base-Emitter ON Voltage vs
Collector Current
V CE = 5V
- 40 °C
25 °C
125 °C
0.3
0.1 1 10 20
I C - COLLECTOR CURRENT (mA)
P43
I CBO - COLLECTOR CURRENT (nA)
5
1
V
Collector-Cutoff Current
vs Ambient Temperature
CB
= 20V
0.1
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( °
A
C)

AC Typical Characteristics
CAPACITANCE (pF)
100
10
1
Input and Output Capacitance
vs Reverse Voltage
Cib
f = 1.0 MHz
Cob
0.1
0.1 1 10 100
V ce - COLLECTOR VOLTAGE(V)
f T - GAIN BANDWIDTH PRODUCT (MHz)
140
120
100
80
60
40
20
NPN RF Transistor
(continued)
Gain Bandwidth Product
vs Collector Current
V ce= 5V
0
1 10 20 50 100 200
I - COLLECTOR CURRENT (mA)
C
P43
PN918 / MMBT918
Contours of Constant Gain
Bandwidth Product (f T
)
Contours of Constant Noise Figure
Small Signal Current Gain
vs. Collector Current
P - POWER DISSIPATION (mW)
D
350
300
250
200
150
100
50
POWER DISSIPATION vs
AMBIENT TEMPERATURE
SOT-23
TO-92
0
0 25 50 75 100 125 150
TEMPERATURE ( ° C)

Common Emitter Y Parameters vs. Frequency
Input Admittance vs. Collector
Current-Output Short Circuit
NPN RF Transistor
(continued)
Input Admittance vs. Collector
Current-Output Short Circuit
PN918 / MMBT918
Input Admittance vs.
Frequency-Output Short Circuit
Forward Transfer Admittance vs.
Frequency-Output Open Circuit
Forward Transfer Admittance vs.
Collector Current-Output
Short Circuit
Forward Transfer Admittance vs.
Collector Current-Output
Short Circuit

Common Emitter Y Parameters vs. Frequency (continued)
Reverse Transfer Admittance vs.
Collector Current-Input Short Circuit
NPN RF Transistor
(continued)
Reverse Transfer Admittance vs.
Collector Current-Input Short Circuit
PN918 / MMBT918
Reverse Transfer Admittance vs.
Frequency-Input Short Circuit
Output Admittance vs. Collector
Current-Input Short Circuit
Output Admittance vs. Collector
Current-Input Short Circuit
Output Admittance vs.
Frequency-Input Short Circuit

Test Circuit
(NOTE 2)
50 pF
175 pF
NPN RF Transistor
(continued)
PN918 / MMBT918
500 mHz Output
into 50Ω
RFC (NOTE 1)
1000 pF
1000 pF
2.2 KΩ
RFC
- V CC
V CC
NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long
NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long
FIGURE 1: 500 MHz Oscillator Circuit