2008 Proceedings - St. Cloud State University
2008 Proceedings - St. Cloud State University
2008 Proceedings - St. Cloud State University
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Abstracts<br />
Session A All Disciplines Ballroom<br />
Is There a Gold Deposit in the Center Valley Area?<br />
Nearly a century ago Mr. Billmeyer, prospected unsuccessfully for gold in the Center Valley area of Morrison County, Minnesota. To test<br />
for any mineralization of the prospected area, 20 samples were selected from tailing piles, and outcrops next to the old prospect pits. Thin<br />
section analysis is being used to identify variations in rock types. Scanning electron microscope, whole rock chemical, and trace element<br />
analyses are being used to test for precious metal enrichment. Metals specifically being tested for are gold, platinum, palladium and silver.<br />
These processes are in progress, and will be sufficient to determine any precious metal enrichment of the Center Valley area in Morrison<br />
County, Minnesota.<br />
Presentation Index: A9<br />
Time: 9:00 a.m.<br />
Department: Earth and Atmospheric Sciences<br />
Project Sponsor(s):<br />
<strong>St</strong>udent Presenter(s): Giese, Amy<br />
Pekarek, Alfred<br />
What Should Be Done About Global Warming?<br />
On February 2, 2007, the leading International Network of Climate Scientists concluded for the first time that global warming is caused by<br />
human activity. Because of this fact, I chose to investigate what should be done to reduce our impact on global warming. I asked 150<br />
students in Biol. 151 at <strong>St</strong>. <strong>Cloud</strong> <strong>St</strong>ate <strong>University</strong> a series of questions relating to these three research questions: 1) To what extent do<br />
SCSU students in Biol. 151 know about global warming? 2) What are the beliefs of SCSU students in Biol. 151 regarding possible<br />
solutions to global warming? 3) To what extent do daily activities of SCSU students in Biol. 151 impact global warming? My research<br />
found that most students know, to a great extent, what causes global warming and believe in finding and using products that reduce their<br />
personal carbon dioxide emissions, including daily behaviors that may affect their lifestyles.<br />
Presentation Index: A10<br />
Time: 9:00 a.m.<br />
Department: Biological Sciences<br />
Project Sponsor(s):<br />
<strong>St</strong>udent Presenter(s): Swanson, Jennessa<br />
Simpson, Patricia<br />
GMR Pathfinder<br />
Magnetic Random Access Memory (MRAM) technology has been touted as the technology of the future with the promise of high speed<br />
switching and long lasting non-volatile memory. MRAM‘s have the capability of speeding up computer boot times, reducing power usage<br />
and should be easy to fabricate. MRAM‘s utilize sub-micron ferro-magnetic structures called bits. These bits are patterned on a common<br />
substrate such as silicon. Bits are essentially tiny magnets whose magnetization is switched by an externally applied magnetic field using<br />
the mechanism of Giant Magneto Resistance (GMR). The problem holding the technology back is mainly the unreliable switching<br />
characteristics of the bits. To solve this we take advantage of the pseudo-spin valve (PSV) structure which virtually eliminates the thermal<br />
affects on the state of the bit thus making the device more reliable. To further improve the reliability of the bits, additional layers of PSV 's<br />
will be added to each bit adding redundancy to the device and increasing the anisotopic field strength required to switch the bit to reduce<br />
the impact of external magnetic fields on the state of the bit. Design factors aside, the most important factor in MRAM device reliability is<br />
the uniformity of well defined device features which will give predictable anisotropic fields throughout the device. This is accomplished by<br />
developing reliable manufacturing processes using cutting edge technology such as ion implantation as apposed to traditional ion mill<br />
methods. Ion implantation minimizes surface variation and improves the physical edge of the bit thereby minimizing switching<br />
irregularities. The development of the manufacturing process using ion implantaion techniques instead of traditional ion milling techniques<br />
for the production of MRAM is the primary focus of the research.<br />
Presentation Index: A11<br />
Time: 9:00 a.m.<br />
Department: Electrical and Computer Engineering<br />
Project Sponsor(s):<br />
<strong>St</strong>udent Presenter(s): Mendonsa, Riyan<br />
Vogt, Timothy<br />
<strong>St</strong>. <strong>Cloud</strong> <strong>St</strong>ate <strong>University</strong> <strong>St</strong>udent Research Colloquium 20<br />
April 22, <strong>2008</strong>