MC34167, MC33167 5.0 A, StepâUp/Down/ Inverting ... - RFPhone
MC34167, MC33167 5.0 A, StepâUp/Down/ Inverting ... - RFPhone MC34167, MC33167 5.0 A, StepâUp/Down/ Inverting ... - RFPhone
MC34167, MC33167 MAXIMUM RATINGS (Note 2) Rating Symbol Value Unit Power Supply Input Voltage V CC 40 V Switch Output Voltage Range V O(switch) −2.0 to + V in V Voltage Feedback and Compensation Input Voltage Range V FB, V Comp −1.0 to + 7.0 V Power Dissipation Case 314A, 314B and 314D (T A = +25°C) P D Internally Limited W Thermal Resistance, Junction−to−Ambient JA 65 °C/W Thermal Resistance, Junction−to−Case JC 5.0 °C/W Case 936A (D 2 PAK) (T A = +25°C) P D Internally Limited W Thermal Resistance, Junction−to−Ambient JA 70 °C/W Thermal Resistance, Junction−to−Case JC 5.0 °C/W Operating Junction Temperature T J +150 °C Operating Ambient Temperature (Note 3) MC34167 MC33167 T A 0 to + 70 − 40 to + 85 °C Storage Temperature Range T stg − 65 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Maximum package power dissipation limits must be observed to prevent thermal shutdown activation. 2. This device series contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL−STD−883, Method 3015. Machine Model Method 200 V. 3. T low = 0°C for MC34167 T high = + 70°C for MC34167 = −40°C for MC33167 = + 85°C for MC33167 http://onsemi.com 2
MC34167, MC33167 ELECTRICAL CHARACTERISTICS (V CC = 12 V, for typical values T A = +25°C, for min/max values T A is the operating ambient temperature range that applies (Notes 4, 5), unless otherwise noted.) OSCILLATOR Frequency (V CC = 7.5 V to 40 V) Characteristic Symbol Min Typ Max Unit T A = +25°C f OSC 65 T A = T low to T high 62 ERROR AMPLIFIER Voltage Feedback Input Threshold T A =+ 25°C V FB(th) 4.95 T A = T low to T high 4.85 4.2 Line Regulation (V CC = 7.5 V to 40 V, T A = +25°C) Reg line − 0.03 0.078 %/V Input Bias Current (V FB = V FB(th) + 0.15 V) I IB − 0.15 1.0 A Power Supply Rejection Ratio (V CC = 10 V to 20 V, f = 120 Hz) PSRR 60 80 − dB Output Voltage Swing High State (I Source = 75 A, V FB = 4.5 V) V OH 4.9 − V Low State (I Sink = 0.4 mA, V FB = 5.5 V) V OL − 1.6 1.9 72 − 5.05 − 79 81 5.15 5.20 kHz V PWM COMPARATOR Duty Cycle (V CC = 20 V) Maximum (V FB = 0 V) Minimum (V Comp = 1.9 V) DC (max) 92 DC (min) 0 95 0 100 0 % SWITCH OUTPUT Output Voltage Source Saturation (V CC = 7.5 V, I Source = 5.0 A) V sat − (V CC −1.5) (V CC −1.8) V Off−State Leakage (V CC = 40 V, Pin 2 = GND) I sw(off) − 0 100 A Current Limit Threshold (V CC = 7.5 V) I pk(switch) 5.5 6.5 8.0 A Switching Times (V CC = 40 V, I pk = 5.0 A, L = 225 H, T A = +25°C) Output Voltage Rise Time Output Voltage Fall Time t r t f − − 100 50 200 100 ns UNDERVOLTAGE LOCKOUT Startup Threshold (V CC Increasing, T A = +25°C) V th(UVLO) 5.5 5.9 6.3 V Hysteresis (V CC Decreasing, T A = +25°C) V H(UVLO) 0.6 0.9 1.2 V TOTAL DEVICE Power Supply Current (T A = +25°C ) Standby (V CC = 12 V, V Comp < 0.15 V) Operating (V CC = 40 V, Pin 1 = GND for maximum duty cycle) 4. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 5. T low = 0°C for MC34167 T high = + 70°C for MC34167 = −40°C for MC33167 = + 85°C for MC33167 I CC − − 36 40 100 60 A mA http://onsemi.com 3
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- Page 5 and 6: MC34167, MC33167 Vsat, SWITCH OUTPU
- Page 7 and 8: MC34167, MC33167 INTRODUCTION The M
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- Page 17 and 18: MC34167, MC33167 Device MC33167D2T
- Page 19 and 20: MC34167, MC33167 PACKAGE DIMENSIONS
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<strong>MC34167</strong>, <strong>MC33167</strong><br />
MAXIMUM RATINGS (Note 2)<br />
Rating Symbol Value Unit<br />
Power Supply Input Voltage V CC 40 V<br />
Switch Output Voltage Range V O(switch) −2.0 to + V in V<br />
Voltage Feedback and Compensation Input Voltage Range V FB, V Comp −1.0 to + 7.0 V<br />
Power Dissipation<br />
Case 314A, 314B and 314D (T A = +25°C) P D Internally Limited W<br />
Thermal Resistance, Junction−to−Ambient JA 65 °C/W<br />
Thermal Resistance, Junction−to−Case JC <strong>5.0</strong> °C/W<br />
Case 936A (D 2 PAK) (T A = +25°C) P D Internally Limited W<br />
Thermal Resistance, Junction−to−Ambient JA 70 °C/W<br />
Thermal Resistance, Junction−to−Case JC <strong>5.0</strong> °C/W<br />
Operating Junction Temperature T J +150 °C<br />
Operating Ambient Temperature (Note 3)<br />
<strong>MC34167</strong><br />
<strong>MC33167</strong><br />
T A<br />
0 to + 70<br />
− 40 to + 85<br />
°C<br />
Storage Temperature Range T stg − 65 to +150 °C<br />
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit<br />
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,<br />
damage may occur and reliability may be affected.<br />
1. Maximum package power dissipation limits must be observed to prevent thermal shutdown activation.<br />
2. This device series contains ESD protection and exceeds the following tests:<br />
Human Body Model 2000 V per MIL−STD−883, Method 3015.<br />
Machine Model Method 200 V.<br />
3. T low = 0°C for <strong>MC34167</strong> T high = + 70°C for <strong>MC34167</strong><br />
= −40°C for <strong>MC33167</strong> = + 85°C for <strong>MC33167</strong><br />
http://onsemi.com<br />
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