RA07M2127M - RFPhone
RA07M2127M - RFPhone RA07M2127M - RFPhone
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07M2127M Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (V GG ). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around V GG =2.5V, the output power and drain current increases substantially. Around V GG =3V (typical) to V GG =3.5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power P in . The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance Z L =50Ω? c) Is the source impedance Z G =50Ω? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA07M2127M MITSUBISHI ELECTRIC 23 Dec 2002 8/9
SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: sod.sophp@hq.melco.co.jp Phone: +81-3-3218-4854 Fax: +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: semis.info@meg.mee.com Phone: +49-2102-486-0 Fax: +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: scdinfo@mehk.com Phone: +852 2510-0555 Fax: +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: semis.info@meg.mee.com Phone: +33-1-55685-668 Fax: +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: semicon@asia.meap.com Phone: +65 64 732 308 Fax: +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: semis.info@meg.mee.com Phone: +39-039-6053-10 Fax: +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: metwnssi@metwn.meap.com Phone: +886-2-2836-5288 Fax: +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: semis.info@meuk.mee.com Phone: +44-1707-278-900 Fax: +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: customerservice@edg.mea.com Phone: 408-730-5900 Fax: 408-737-1129 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: 905-475-7728 Fax: 905-475-1918 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 Fax: +61 2 9684-7208 +61 2 9684 7245 RA07M2127M MITSUBISHI ELECTRIC 23 Dec 2002 9/9
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ELECTROSTATIC SENSITIVE DEVICE<br />
OBSERVE HANDLING PRECAUTIONS<br />
MITSUBISHI RF POWER MODULE<br />
<strong>RA07M2127M</strong><br />
Output Power Control:<br />
Depending on linearity, the following two methods are recommended to control the output power:<br />
a) Non-linear FM modulation:<br />
By the gate voltage (V GG ).<br />
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage<br />
current flows from the battery into the drain.<br />
Around V GG =2.5V, the output power and drain current increases substantially.<br />
Around V GG =3V (typical) to V GG =3.5V (maximum), the nominal output power becomes available.<br />
b) Linear AM modulation:<br />
By RF input power P in .<br />
The gate voltage is used to set the drain’s quiescent current for the required linearity.<br />
Oscillation:<br />
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,<br />
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.<br />
When an amplifier circuit around this module shows oscillation, the following may be checked:<br />
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?<br />
b) Is the load impedance Z L =50Ω?<br />
c) Is the source impedance Z G =50Ω?<br />
Frequent on/off switching:<br />
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and<br />
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced<br />
mechanical stress.<br />
Quality:<br />
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding<br />
those of mobile radios.<br />
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.<br />
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are<br />
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.<br />
Keep safety first in your circuit designs!<br />
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but<br />
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property<br />
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such<br />
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any<br />
malfunction or mishap.<br />
<strong>RA07M2127M</strong> MITSUBISHI ELECTRIC 23 Dec 2002<br />
8/9
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