RD06HVF1 - RFPhone

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ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MOS FET RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm) , Gp(dB) , Idd(A) 50 40 30 20 10 Ta=+25°C f=175MHz Vdd=12.5V Idq=0.3A Po Gp η 100 80 60 40 20 ηd(%) Pout(W) , Idd(A) 14 12 10 8 6 4 2 Idd Po ηd Ta=25°C f=175MHz Vdd=12.5V Idq=0.3A 100 90 80 70 60 50 40 ηd(%) 0 0 5 10 15 20 25 30 Pin(dBm) 0 0 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Pin(W) Po(W) 16 14 12 10 8 6 Vdd-Po CHARACTERISTICS Ta=25°C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm Po Idd 4 3 2 Idd(A) Ids(A),GM(S) 5 4 3 2 Vgs-Ids CHARACTORISTICS 2 Vds=10V Tc=-25~+75°C -25°C +75°C +25°C 4 2 0 4 6 8 10 12 14 Vdd(V) 1 0 1 0 0 2 4 6 8 10 Vgs(V) 2.0 1.5 Vgs-gm CHARACTORISTICS Vds=10V Tc=-25~+75°C gm(S) 1.0 -25°C 0.5 +75°C +25°C 0.0 0 1 2 3 4 5 6 7 8 9 Vgs(V) RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 4/8
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MOS FET RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W TEST CIRCUIT(f=175MHz) Vgg Vdd C1 9.1kOHM L6 8.2kOHM 100OHM C3 L1 L2 300pF L3 L4 175MHz RD06HVF1 L5 C2 RF-IN 300pF 82pF RF-OUT 10pF 7 5 5pF 30pF 100 75 92 55 72 33 52 25 30 70 87 92 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006 5/8
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