RD06HVF1 - RFPhone
RD06HVF1 - RFPhone
RD06HVF1 - RFPhone
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ELECTROSTATIC SENSITIVE DEVICE<br />
OBSERVE HANDLING PRECAUTIONS<br />
MITSUBISHI RF POWER MOS FET<br />
<strong>RD06HVF1</strong><br />
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W<br />
TYPICAL CHARACTERISTICS<br />
CHANNEL DISSIPATION<br />
Pch(W)<br />
50<br />
40<br />
30<br />
20<br />
10<br />
CHANNNEL DISSIPATION VS.<br />
AMBIENT TEMPERATURE<br />
Ids(A)<br />
5<br />
4<br />
3<br />
2<br />
1<br />
Vgs-Ids CHARACTERISTICS<br />
Ta=+25°C<br />
Vds=10V<br />
0<br />
0 40 80 120 160 200<br />
AMBIENT TEMPERATURE Ta(°C)<br />
0<br />
0 2 4 6 8 10<br />
Vgs(V)<br />
Ids(A)<br />
4<br />
3<br />
2<br />
1<br />
Vds-Ids CHARACTERISTICS<br />
Ta=+25°C<br />
Vgs=10V<br />
Vgs=9V<br />
Vgs=8V<br />
Vgs=7V<br />
Vgs=6V<br />
Ciss(pF)<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
Vds VS. Ciss CHARACTERISTICS<br />
Ta=+25°C<br />
f=1MHz<br />
0<br />
0 2 4 6 8 10<br />
Vds(V)<br />
Vgs=5V<br />
0<br />
0 10 20 30<br />
Vds(V)<br />
Vds VS. Coss CHARACTERISTICS<br />
Vds VS. Crss CHARACTERISTICS<br />
100<br />
80<br />
Ta=+25°C<br />
f=1MHz<br />
10<br />
8<br />
Ta=+25°C<br />
f=1MHz<br />
Coss(pF)<br />
60<br />
40<br />
Crss(pF)<br />
6<br />
4<br />
20<br />
2<br />
0<br />
0 10 20 30<br />
Vds(V)<br />
0<br />
0 10 20 30<br />
Vds(V)<br />
<strong>RD06HVF1</strong> MITSUBISHI ELECTRIC 10 Jan 2006<br />
3/8
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