RA30H4047M - RFPhone
RA30H4047M - RFPhone
RA30H4047M - RFPhone
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ELECTROSTATIC SENSITIVE DEVICE<br />
OBSERVE HANDLING PRECAUTIONS<br />
MITSUBISHI RF POWER MODULE<br />
<strong>RA30H4047M</strong><br />
TYPICAL PERFORMANCE (T case =+25°C, Z G =Z L =50Ω, unless otherwise specified)<br />
TYPICAL PERFORMANCE DATA<br />
OUTPUT POWER Po(W)<br />
OUTPUT POWER, TOTAL EFFICIENCY,<br />
INPUT VSWR VS. FREQUENCY<br />
60<br />
50<br />
40<br />
30<br />
20<br />
Eta<br />
Po<br />
@V<br />
VDD=12.5V, Pin=50mW<br />
VGG=5V, ZG=ZL=50ohm,<br />
Tc=+25deg.C<br />
120<br />
100<br />
80<br />
60<br />
40<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER<br />
Po(dBm)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. INPUT POWER<br />
50<br />
10<br />
ρin 20<br />
30<br />
0<br />
0<br />
0<br />
-10 -5 0 5 10 15 20<br />
390 400 410 420 430 440 450 460 470 480<br />
INPUT POWER Pin(dBm)<br />
FREQUENCY f(MHz)<br />
45<br />
40<br />
35<br />
Po<br />
Eta<br />
freq.=400MHz<br />
Gp<br />
VDD=12.5V , VGG=5V<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
100<br />
80<br />
60<br />
40<br />
20<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER<br />
Po(dBm)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. INPUT POWER<br />
50<br />
45<br />
40<br />
35<br />
30<br />
0<br />
-10 -5 0 5 10 15 20<br />
Po<br />
INPUT POWER Pin(dBm)<br />
Eta<br />
freq.=435MHz<br />
VDD=12.5V , VGG=5V<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
Gp<br />
100<br />
80<br />
60<br />
40<br />
20<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER<br />
Po(dBm)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. INPUT POWER<br />
50<br />
45<br />
40<br />
35<br />
Po<br />
Eta<br />
freq.=470MHz<br />
VDD=12.5V , VGG=5V<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
30<br />
0<br />
-10 -5 0 5 10 15 20<br />
INPUT POWER Pin(dBm)<br />
Gp<br />
100<br />
80<br />
60<br />
40<br />
20<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER Po(W)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. DRAIN SUPPLY VOLTAGE<br />
70<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
0<br />
f=400/435/470MHz<br />
VGG=5V, Pin=50mW<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
Eta<br />
Po<br />
: 400MHz<br />
: 435MHz<br />
- - - - -:470MHz<br />
0 2 4 6 8 10 12 14 16 18<br />
DRAIN SUPPLY VOLTAGE (VDD)<br />
140<br />
120<br />
100<br />
80<br />
60<br />
40<br />
20<br />
0<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER Po(W)<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
OUTPUT POWER, EFFICIENCY<br />
VS. GATE SUPPLY VOLTAGE<br />
0<br />
f=400MHz<br />
VDD=12.5V, Pin=50mW<br />
ZG=ZL=50ohm, Tv=+25degC<br />
Eta<br />
Po<br />
2 2.5 3 3.5 4 4.5 5 5.5 6<br />
GATE SUPPLY VOLTAGE (VGG)<br />
120<br />
100<br />
80<br />
60<br />
40<br />
20<br />
0<br />
TOTL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER Po(W)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. GATE SUPPLY VOLTAGE<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
f=435MHz<br />
VDD=12.5V, Pin=50mW<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
0<br />
0<br />
2 2.5 3 3.5 4 4.5 5 5.5 6<br />
Po<br />
Eta<br />
GATE SUPPLY VOLTAGE (VGG)<br />
120<br />
100<br />
80<br />
60<br />
40<br />
20<br />
TOTAL EFFICIENCY<br />
Eta(%)<br />
OUTPUT POWER Po(W)<br />
OUTPUT POWER, EFFICIENCY<br />
VS. GATE SUPPLY VOLTAGE<br />
60<br />
50<br />
40<br />
30<br />
20<br />
10<br />
RA 30H4047M MITSUBISHI ELECTRIC 23 Dec 2002<br />
3/9<br />
0<br />
f=470MHz<br />
VDD=12.5V, Pin=50mW<br />
ZG=ZL=50ohm, Tc=+25deg.C<br />
Po<br />
Eta<br />
2 2.5 3 3.5 4 4.5 5 5.5 6<br />
GATE SUPPLY VOLTAGE (VGG)<br />
120<br />
100<br />
80<br />
60<br />
40<br />
20<br />
0<br />
TOTAL EFFICIENCY<br />
Eta(%)