RA30H4047M - RFPhone

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ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MAXIMUM RATINGS (T case =+25°C, unless otherwise specified) MITSUBISHI RF POWER MODULE <strong>RA30H4047M</strong> SYMBOL PARAMETER CONDITIONS RATING UNIT V DD Drain Voltage V GG
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE <strong>RA30H4047M</strong> TYPICAL PERFORMANCE (T case =+25°C, Z G =Z L =50Ω, unless otherwise specified) TYPICAL PERFORMANCE DATA OUTPUT POWER Po(W) OUTPUT POWER, TOTAL EFFICIENCY, INPUT VSWR VS. FREQUENCY 60 50 40 30 20 Eta Po @V VDD=12.5V, Pin=50mW VGG=5V, ZG=ZL=50ohm, Tc=+25deg.C 120 100 80 60 40 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(dBm) OUTPUT POWER, EFFICIENCY VS. INPUT POWER 50 10 ρin 20 30 0 0 0 -10 -5 0 5 10 15 20 390 400 410 420 430 440 450 460 470 480 INPUT POWER Pin(dBm) FREQUENCY f(MHz) 45 40 35 Po Eta freq.=400MHz Gp VDD=12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 100 80 60 40 20 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(dBm) OUTPUT POWER, EFFICIENCY VS. INPUT POWER 50 45 40 35 30 0 -10 -5 0 5 10 15 20 Po INPUT POWER Pin(dBm) Eta freq.=435MHz VDD=12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C Gp 100 80 60 40 20 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(dBm) OUTPUT POWER, EFFICIENCY VS. INPUT POWER 50 45 40 35 Po Eta freq.=470MHz VDD=12.5V , VGG=5V ZG=ZL=50ohm, Tc=+25deg.C 30 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) Gp 100 80 60 40 20 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(W) OUTPUT POWER, EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 70 60 50 40 30 20 10 0 f=400/435/470MHz VGG=5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C Eta Po : 400MHz : 435MHz - - - - -:470MHz 0 2 4 6 8 10 12 14 16 18 DRAIN SUPPLY VOLTAGE (VDD) 140 120 100 80 60 40 20 0 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(W) 60 50 40 30 20 10 OUTPUT POWER, EFFICIENCY VS. GATE SUPPLY VOLTAGE 0 f=400MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tv=+25degC Eta Po 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE SUPPLY VOLTAGE (VGG) 120 100 80 60 40 20 0 TOTL EFFICIENCY Eta(%) OUTPUT POWER Po(W) OUTPUT POWER, EFFICIENCY VS. GATE SUPPLY VOLTAGE 60 50 40 30 20 10 f=435MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C 0 0 2 2.5 3 3.5 4 4.5 5 5.5 6 Po Eta GATE SUPPLY VOLTAGE (VGG) 120 100 80 60 40 20 TOTAL EFFICIENCY Eta(%) OUTPUT POWER Po(W) OUTPUT POWER, EFFICIENCY VS. GATE SUPPLY VOLTAGE 60 50 40 30 20 10 RA 30H4047M MITSUBISHI ELECTRIC 23 Dec 2002 3/9 0 f=470MHz VDD=12.5V, Pin=50mW ZG=ZL=50ohm, Tc=+25deg.C Po Eta 2 2.5 3 3.5 4 4.5 5 5.5 6 GATE SUPPLY VOLTAGE (VGG) 120 100 80 60 40 20 0 TOTAL EFFICIENCY Eta(%)
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Page 9: SALES CONTACT JAPAN: Mitsubishi Ele

RA30H4047M - RFPhone

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