Application Note - Semikron
Application Note - Semikron
Application Note - Semikron
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<strong>Application</strong> <strong>Note</strong> AN-11001<br />
NPC & TNPC:<br />
The equations are valid for M = 0…1. The modulation<br />
index M correlates DC-link voltage and RMS voltage:<br />
M <br />
2 V<br />
V<br />
3 <br />
RMS<br />
DC<br />
2<br />
Typical values of K V, K I and G I for SEMIKRON modules<br />
are shown in Fig. 16.<br />
Fig. 16: Typ. K V, K I and G I values for SEMIKRON modules<br />
IGBT<br />
Diode<br />
K V 1.4 0.6<br />
K I<br />
1 0.6<br />
G I 1 1.15<br />
SemiSel<br />
SemiSel is SEMIKRON’s online simulation tool to<br />
calculate losses and temperatures of power<br />
semiconductors in customer specific applications.<br />
From specific values for cooling (e.g. type and<br />
performance of the heatsink, ambient temperature) and<br />
electric parameters (e.g. input/output voltage, switching<br />
frequency, load current, etc.) SemiSel calculates the<br />
power losses and junction temperatures of all IGBTs and<br />
diodes within a few seconds. By changing certain<br />
parameters the optimum setup (which type of module,<br />
switching frequency,…) can easily be found.<br />
SemiSel 4.0 has been extended to calculate the 3L NPC<br />
topology in the same convenient way as 2L designs.<br />
Symbols and Terms used<br />
Letter Symbol Term<br />
2L<br />
Two level<br />
3L<br />
Three level<br />
CD<br />
Clamping Diode<br />
cos <br />
Power factor<br />
CS1 Collector Sense of IGBT 1<br />
DC+<br />
Positive potential (terminal) of a direct voltage source<br />
DC-<br />
Negative potential (terminal) of a direct voltage source<br />
di/dt<br />
Rate of rise and fall of current<br />
E<br />
Electrical energy<br />
E SW<br />
f SW<br />
FWD<br />
GA<br />
GAL<br />
GAR<br />
GB<br />
G I<br />
GM<br />
i<br />
Î<br />
I C,NOM<br />
IGBT<br />
I peak<br />
I ref<br />
I RMS<br />
<br />
K I<br />
K V<br />
L S<br />
M<br />
N<br />
NPC<br />
NTC<br />
Sum of energy dissipation during turn-on and turn-off-time<br />
Switching frequency<br />
Free Wheeling Diode<br />
Single Switch<br />
Chopper, low IGBT<br />
Chopper, high IGBT<br />
Half-bridge<br />
Adaptation factor for the non-linear semiconductor characteristics<br />
Half-bridge with anti-serial switches (IGBT and antiparallel diode)<br />
Time dependant value of current<br />
Peak value of current<br />
Nominal collector current<br />
Insulated Gate Bipolar Transistor<br />
Peak value of current<br />
Reference current value of the switching loss measurement<br />
AC terminal current<br />
Conduction angle<br />
Exponent for the current dependency of switching losses<br />
Exponent for the voltage dependency of switching losses<br />
Parasitic inductance / stray inductance<br />
Modulation index<br />
Neutral potential (terminal) of a direct voltage source; midpoint between DC+ and DC-<br />
Neutral Point Clamped<br />
Temperature sensor with negative temperature coefficient<br />
© by SEMIKRON<br />
2012-09-03 – Rev04<br />
11 / 12
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