STM32W108C8

STM32W108C8
Electrical characteristics
Table 150.
Digital I/O characteristics (continued)
Parameter Conditions Min. Typ. Max. Unit
Output voltage for logic 0
V OL
(I OL = 4 mA for standard
pads, 8 mA for high
current pads)
0 –
0.18 x
VDD_PAD
S
V
Output voltage for logic 1
V OH
(I OH = 4 mA for standard
pads, 8 mA for high
current pads)
0.82 x
VDD_PAD
S
–
VDD_PAD
S
V
Output source current (standard
current pad)
Output sink current (standard
current pad)
Output source current
high current pad: PA6, PA7,
PB6, PB7, PC0
Output sink current
high current pad: PA6, PA7,
PB6, PB7, PC0
Total output current (for I/O
Pads)
I OHS – – 4 mA
I OLS – – 4 mA
I OHH – – 8 mA
I OLH – – 8 mA
I OH + I OL – – 40 mA
Input voltage threshold for
OSC32A
0.2 x
VDD_PAD
S
–
0.8 x
VDD_PAD
S
V
Input voltage threshold for
OSCA
0.2 x
VDD_PAD
SA
–
0.8 x
VDD_PAD
SA
V
14.8 Non-RF system electrical characteristics
Table 151 lists the non-RF system level characteristics for the STM32W.
Table 151. Non-RF system electrical characteristics
Parameter Conditions Min. Typ. Max. Unit
System wakeup time from deep
sleep
Shutdown time going into deep
sleep
From wakeup event to first
ARM ® Cortex-M3 instruction
running from 6MHz internal RC
clock
Includes supply ramp time and
oscillator startup time
From last ARM ® Cortex-M3
instruction to deep sleep mode
– 110 – µs
– 5 – µs
Doc ID 018587 Rev 2 206/215