STM32W108C8

Electrical characteristics
STM32W108C8
Table 149.
DC electrical characteristics (continued)
Parameter Conditions Min. Typ. Max. Unit
Total Tx current ( = I Radio transmitter,
MAC and baseband, CPU + I RAM, and
Flash memory )
VDD_PADS = 3.0 V, 25 °C;
maximum power setting
(+7 dBm); ARM ® Cortex-M3
running at 12 MHz
VDD_PADS = 3.0 V, 25 °C;
+3 dBm power setting; ARM ®
Cortex-M3 running at 12 MHz
VDD_PADS = 3.0 V, 25 °C;
0dBm power setting; ARM ®
Cortex-M3 running at 12 MHz
VDD_PADS = 3.0 V, 25 °C;
minimum power setting; ARM ®
Cortex-M3 running at 12 MHz
VDD_PADS = 3.0 V, 25 °C;
maximum power setting
(+7 dBm); ARM ® Cortex-M3
running at 24 MHz
VDD_PADS = 3.0 V, 25 °C;
+3 dBm power setting; ARM ®
Cortex-M3 running at 24 MHz
VDD_PADS = 3.0 V, 25 °C;
0dBm power setting; ARM ®
Cortex-M3 running at 24 MHz
VDD_PADS = 3.0 V, 25 °C;
minimum power setting; ARM ®
Cortex-M3 running at 24 MHz
– 42.0 – mA
– 29.5 – mA
– 27.0 – mA
– 21.0 – mA
– 43.5 – mA
– 31.0 – mA
– 28.5 – mA
– 22.5 – mA
203/215 Doc ID 018587 Rev 2