KSE340 NPN Epitaxial Silicon Transistor
KSE340 NPN Epitaxial Silicon Transistor
KSE340 NPN Epitaxial Silicon Transistor
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Typical Characteristics<br />
<strong>KSE340</strong><br />
h FE<br />
, DC CURRENT GAIN<br />
1000<br />
100<br />
10<br />
V CE<br />
= 2V<br />
1<br />
1 10 100 1000<br />
I C<br />
[A], COLLECTOR CURRENT<br />
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE<br />
1.2 IC = 10IB<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
VBE(sat)<br />
VCE(sat)<br />
0.0<br />
10 100 1000<br />
IC[A], COLLECTOR CURRENT<br />
Figure 1. DC current Gain<br />
Figure 2. Base-Emitter Saturation Voltage<br />
Collector-Emitter Saturation Voltage<br />
10<br />
32<br />
28<br />
IC[A], COLLECTOR CURRENT<br />
1<br />
0.1<br />
DC<br />
1ms<br />
500µs<br />
10µs<br />
P C<br />
[W], POWER DISSIPATION<br />
24<br />
20<br />
16<br />
12<br />
8<br />
4<br />
0.01<br />
1 10 100<br />
VCE[V], COLLECTOR-EMITTER VOLTAGE<br />
0<br />
0 25 50 75 100 125 150 175<br />
Tc[ o C], CASE TEMPERATURE<br />
Figure 3. Safe Operating Area<br />
Figure 4. Power Derating<br />
©2000 Fairchild Semiconductor International<br />
Rev. A1, December 2000
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