SIPMOS Small-Signal Transistor BSP 135

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BSP 135 Electrical Characteristics at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = − 3 V, I D = 0.25 mA Gate threshold voltage V DS = 3 V, I D = 1 mA Drain-source cutoff current V DS = 600 V, V GS = − 3 V T j = 25 ˚C T j = 125 ˚C Gate-source leakage current V GS = 20 V, V DS = 0 Drain-source on-resistance V GS = 0 V, I D = 0.01 A V (BR)DSS 600 – – V GS(th) − 1.8 − 1.5 − 0.7 – – – – 100 200 I GSS – 10 100 R DS(on) – 40 60 V nA µA nA Ω g Dynamic Characteristics Forward transconductance S V DS ≥ 2 × I D × R DS(on)max , I D = 0.01 A fs 0.01 0.04 – Input capacitance C iss pF V GS = − 3 V, V DS = 25 V, f = 1 MHz – 110 150 Output capacitance V GS = − 3 V, V DS = 25 V, f = 1 MHz C oss – 8 12 Reverse transfer capacitance V GS = − 3 V, V DS = 25 V, f = 1 MHz C rss – 3 5 Turn-on time t on , (t on = t d(on) + t r ) t d(on) – 4 6 ns V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω, t r – 10 15 I D = 0.2 A Turn-off time t off , (t off = t d(off) + t f ) t d(off) – 15 20 V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω, I D = 0.2 A t f – 20 30 Semiconductor Group 2
BSP 135 Electrical Characteristics (cont’d) at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit Reverse Diode Continuous reverse drain current T A = 25 ˚C Pulsed reverse drain current T A = 25 ˚C Diode forward on-voltage I F = 0.2 A, V GS = 0 min. typ. max. I S – – 0.100 I SM – – 0.300 V SD – 0.90 1.30 A V V GS(th) Grouping Symbol Limit Values Unit Test Condition min. max. Range of V GS(th) ∆V GS(th) – 0.15 V – Threshold voltage selected in groups 1) : P R S T U V W 1) A specific group cannot be ordered separately. Each reel only contains transistors from one group. Package Outline V GS(th) – 0.95 – 1.08 – 1.21 – 1.34 – 1.47 – 1.60 – 1.73 – 0.80 – 0.93 – 1.06 – 1.19 – 1.32 – 1.45 – 1.58 V V V V V V V V DS1 = 0.2 V; V DS2 = 3 V; I D = 1 mA SOT-223 Dimensions in mm Semiconductor Group 3
Page 1: SIPMOS ® Small-Signal Transistor B
Page 5 and 6: BSP 135 Typ. transfer characteristi
Page 7: BSP 135 Drain-source breakdown volt

SIPMOS Small-Signal Transistor BSP 135

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