SIPMOS Small-Signal Transistor BSP 135
SIPMOS Small-Signal Transistor BSP 135
SIPMOS Small-Signal Transistor BSP 135
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<strong>BSP</strong> <strong>135</strong><br />
Electrical Characteristics<br />
at T j = 25 ˚C, unless otherwise specified.<br />
Parameter Symbol Values Unit<br />
min. typ. max.<br />
Static Characteristics<br />
Drain-source breakdown voltage<br />
V GS = − 3 V, I D = 0.25 mA<br />
Gate threshold voltage<br />
V DS = 3 V, I D = 1 mA<br />
Drain-source cutoff current<br />
V DS = 600 V, V GS = − 3 V<br />
T j = 25 ˚C<br />
T j = 125 ˚C<br />
Gate-source leakage current<br />
V GS = 20 V, V DS = 0<br />
Drain-source on-resistance<br />
V GS = 0 V, I D = 0.01 A<br />
V (BR)DSS<br />
600 – –<br />
V GS(th)<br />
− 1.8 − 1.5 − 0.7<br />
–<br />
–<br />
–<br />
–<br />
100<br />
200<br />
I GSS<br />
– 10 100<br />
R DS(on)<br />
– 40 60<br />
V<br />
nA<br />
µA<br />
nA<br />
Ω<br />
g<br />
Dynamic Characteristics<br />
Forward transconductance<br />
S<br />
V DS ≥ 2 × I D × R DS(on)max , I D = 0.01 A<br />
fs<br />
0.01 0.04 –<br />
Input capacitance<br />
C iss<br />
pF<br />
V GS = − 3 V, V DS = 25 V, f = 1 MHz<br />
– 110 150<br />
Output capacitance<br />
V GS = − 3 V, V DS = 25 V, f = 1 MHz<br />
C oss<br />
– 8 12<br />
Reverse transfer capacitance<br />
V GS = − 3 V, V DS = 25 V, f = 1 MHz<br />
C rss<br />
– 3 5<br />
Turn-on time t on , (t on = t d(on) + t r ) t d(on) – 4 6 ns<br />
V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω, t r – 10 15<br />
I D = 0.2 A<br />
Turn-off time t off , (t off = t d(off) + t f ) t d(off) – 15 20<br />
V DD =30V,V GS = − 3 V ... + 5 V, R GS =50Ω,<br />
I D = 0.2 A<br />
t f – 20 30<br />
Semiconductor Group 2
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